Samsung Electronics Co., Ltd.

Hyeongmo Kang

Seungbo Shim

Dougyong Sung

Minjae Lee

Yonghee Kim

Myungsun Choi

Donghyeon Na

Minyoung Hur

Byunghun Han

Juho Lee

Jihwan Kim

Hyun Bae Kim

Nam Kyun Kim

Kyung-sun Kim

Daeun Son

A substrate treatment apparatus may include a chucking stage supporting a substrate, a sinusoidal generator supplying a sinusoidal wave to the chucking stage, a non-sinusoidal generator supplying a non-sinusoidal wave to the chucking stage, and a mixer between each of the sinusoidal and non-sinusoidal generators and the chucking stage. The chucking stage may include a chuck body and a plasma electrode in the chuck body. The mixer may include a high pass filter between the sinusoidal generator and the plasma electrode, a low pass filter between the non-sinusoidal generator and the plasma electrode, and a band stop filter between the low pass filter and the plasma electrode.

Substrate treatment apparatus and semiconductor device manufacturing method using the same

A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

Plasma etching method and semiconductor device fabrication method including the same

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Hwaseong-si, South Korea

Hyeongmo Kang