Samsung Electronics Co., Ltd.

Hyeong-Won Seo

Jae-Man Yoon

Kang-yoon Lee

Young-Woong Son

A semiconductor device includes an isolation layer disposed in a semiconductor device to define an active region. A gate trench is disposed across the active region and extends to the isolation layer. An insulated gate electrode fills a portion of the gate trench and covers at least one sidewall of the active region. A portion of the gate electrode, that covers at least one sidewall of the active region, extends under a portion of the gate electrode that crosses the active region. An insulating pattern is disposed on the gate electrode.

Growing community of inventors

Yongin-si, South Korea

Hyeong-Won Seo