Industry-Academic Cooperation Foundation Gyeongsang National University

Hyeong Tae Kim

Jun Hong Park

Do Hyeon Lee

As the optoelectronic synaptic device according to a preferred embodiment includes a photoactive layer in which a heterojunction is formed as inorganic quantum dots that accept a near-infrared light signal directly contacts a transition metal dichalcogenide as a two-dimensional semiconductor material that exhibits synaptic characteristics, there is an effect of making a synaptic response to an optical signal in the near-infrared wavelength range. Therefore, as a function of simulating the human visual-brain function, which shows the neuromorphic characteristics by the photo response (visual response) of the infrared wavelength, together with light detection characteristics sensitively and rapidly responding to an infrared wavelength signal as well as a visible light signal, can be implemented in a single device for the sake of accurate recognition of objects, it can be easily applied in the autonomous driving mobility field.

Optoelectronic synaptic device including quantum dot(QD)-transition metal chalcogenide(TMD) heterojunction

A transition metal chalcogenide flake manufactured by the molten salt-assisted thermal chemical vapor deposition method according to a preferred embodiment can be uniformly and evenly grown on a large-area substrate with a size of several to several hundred micrometers in scale, and a light-gated transistor using this as a light sensing layer can perform logical operations of AND, OR, and summation operations in response to light stimulation and enable a low-power synaptic operation response.

Growing community of inventors

Changwon-si, South Korea

Hyeong Tae Kim