Hyundai Electronics Industries Co. Ltd.

Hynix Semiconductor Inc.

Hyeong Soo Kim

Ki Ho Baik

Jae Chang Jung

Geun Su Lee

Jin Soo Kim

Keun Kyu Kong

Min Ho Jung

Myoung Soo Kim

Sung Eun Hong

Hyoung Gi Kim

Cha Won Koh

Chang Il Choi

Chang Mun Lim

The invention relates to a mask and a method of fabricating the same. When a mask pattern is formed using E-Beam, the size of the divisional region obtained by a fracturing process can not be formed equally. Therefore, the uniformity of the mask pattern is degraded. In order to form the divisional region to be of equal sizes, the method includes performing a fracturing process by adding a subsidiary pattern to divide a region except for mask pattern, thereby obtaining a mask pattern having excellent uniformity and reducing defects of semiconductor devices.

Mask and method of fabricating the same

The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F(157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same

The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Top-coating composition for photoresist and process for forming fine pattern using the same

Reflection-inhibiting resin used in process for forming photoresist pattern

The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.

Process for forming a photoresist pattern comprising alkaline treatment

The present invention relates to photoresist compositions for resist flow process and processes for forming a contact hole pattern using the same. In particular, the present invention relates to photoresist composition comprising a thermal curing agent which cures photoresist composition at an elevated temperature. In one embodiment, the thermal curing agent comprises a thermal acid generator and a curing compound. Preferably, the curing compound comprises a cross-linking moiety which is capable of curing the photoresist composition when reacted with the acid that is generated by the thermal acid generator. Photoresist compositions of the present invention reduces or eliminate overflow of photoresist during a resist flow process, thereby preventing a contact hole pattern from being destroyed. In addition, photoresist compositions of the present invention allow formation of uniform sized patterns and increase in etching selection rate.

Photoresist composition for resist flow process and process for forming a contact hole using the same

The present invention provides photoresist resins and photoresist compositions comprising the same, which are useful in a resist flow process. The present invention also provides a process for forming a contact hole pattern using the same. In particular, the photoresist resin of the present invention comprises a mixture of polymers. Preferably, a mixture of a first copolymer and a second copolymer. In one aspect, the first and the second copolymers have different properties. Photoresist compositions of the present invention can be used to reduce or eliminate photoresist overflow during a resist flow process. In addition, photoresist compositions of the present invention allow formation of uniform sized patterns and improve standing wave effect.

Photoresist composition for resist flow process, and process for forming contact hole using the same

Photoresist cross-linker and photoresist composition comprising the same

Photoresist polymers and photoresist composition containing the same

Photoresist monomers and preparation thereof

The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources.

A mask structure used in the lithography process for semiconductors is disclosed. The mask structure comprises upper and lower masks, a light-blocking pattern formed on a region where the upper mask and the lower masks overlap one another, wherein a line width of the light-blocking pattern in the overlapping region is larger than that of in a non-overlapping region or a dummy light-blocking pattern having minute line width is formed between the light-blocking patterns so that the excessive light could not reach to the overlapping region of the upper and the lower masks due to repeated exposure in the stitching exposure process for forming a mask pattern by overlapping the masks in case that a chip size is larger than an exposure area exposed by an exposure equipment.

Mask for use in stitching exposure process

A method for forming micro patterns of a semiconductor device which uses a dipole illumination aperture adapted to transmit the spatial frequency components of light only in the X-axis direction and a dipole illumination aperture adapted to transmit the spatial frequency components of light only in the Y-axis direction, thereby obtaining the same effect as in the case using two sheets of masks to provide an increase in process margin.

Growing community of inventors

Kyoungki-do, South Korea

Hyeong Soo Kim