Samsung Sdi Co., Inc.

Hyeong Mook Kim

Jong Won Lee

Dong Hun Kang

Won Jung Kim

Youn Jin Cho

Yoon Young Koo

Eui Rang Lee

Tae Won Park

Keun Sam Jang

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3:

CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same

A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1,

CMP slurry composition for copper films and method of polishing copper films using the same

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Suwon-si, South Korea

Hyeong Mook Kim