Seoul National University

Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Hyeong-Joon Kim

So-Young Lee

Nae-in Lee

Sang-Hyun Park

Jong-Woo Kim

Yoon-Hyeung Cho

Min-Ho Oh

Yong-Tak Kim

Ji-Young Moon

Ha-Jin Lim

Hyuk-Jin Kim

Seung-Ha Oh

A display apparatus including a substrate, a display panel on the substrate, and an encapsulation film sealing the display panel. The encapsulation film includes at least one organic layer and/or at least one inorganic layer and at least one pair of conductive layers.

Display apparatus including encapsulation film and method of inspecting the encapsulation film

A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

Semiconductor device and method of fabricating the same

A display apparatus is provided. The display apparatus includes a substrate, a display panel on the substrate, and an encapsulation film sealing the display panel. The encapsulation film includes at least one organic layer and/or at least one inorganic layer and at least one pair of conductive layers.

A semiconductor device includes a semiconductor substrate including a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate 5 structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

Growing community of inventors

Seoul, South Korea

Hyeong-Joon Kim