Electronics and Telecommunications Research Institute

Samsung Electronics Co., Ltd.

Hyeong Geun Park

Il Gyu Kim

Young Jo Ko

Hyo Seok Yi

Seung Chan Bang

Young Hoon Kim

Kap Seok Chang

Chan Bok Jeong

Moon Sik Lee

Kapseok Chang

Sang-Yong Park

Jongwon Kim

Tae-wan Lim

Kee-jeong Rho

Hyunmin Lee

Young-Hoon Kim

Jeehoon Han

Seungmin Song

Hyun Seo Oh

Jang-Hyun You

Joowon Park

Mun Geon Kyeong

Bongtae Park

Hojong Kang

Kyoung Joon Lee

Seung-Chan Bang

Yong-Seok Choi

Changseok Kang

Chung Sup Kim

Ki Cheol Tae

Eun Jeong Shin

Soo Ho Sohn

The present application relates to a method of generating a downlink frame. The method of generating the downlink frame includes: generating a first short sequence and a second short sequence indicating cell group information; generating a first scrambling sequence and a second scrambling sequence determined by the primary synchronization signal; generating a third scrambling sequence determined by the first short sequence and a fourth scrambling sequence determined by the second short sequence; scrambling the short sequences with the respective scrambling sequences; and mapping the secondary synchronization signal that includes the first short sequence scrambled with the first scrambling sequence, the second short sequence scrambled with the second scrambling sequence and the third scrambling sequence, the second short sequence scrambled with the first scrambling sequence and the first short sequence scrambled by the second scrambling sequence and the fourth scrambling sequence to a frequency domain.

Generating downlink frame and searching for cell

A method of searching a cell in a mobile station of a communication system in which a plurality of cells are grouped into a plurality of cell groups, each cell group including at least two cells, includes: detecting a primary synchronization signal and a secondary synchronization signal from a received signal; and identifying a cell based on a combination of the primary synchronization signal and the secondary synchronization signal. The secondary synchronization signal is related to the cell group to which the mobile station belongs and the primary synchronization signal is related to the cell to which the mobile station belongs within the cell group.

Cell search method, forward link frame transmission method, apparatus using the same and forward link frame structure

Vertical memory devices, and methods of manufacturing the same, include providing a substrate including a cell array region and a peripheral circuit region, forming a mold structure in the cell array region, forming an opening for a common source line passing through the mold structure and extending in a first direction perpendicular to a top surface of the substrate, forming a first contact plug having an inner sidewall delimiting a recessed region in the opening for the common source line, and forming a common source bit line contact electrically connected to the inner sidewall of the first contact plug.

Vertical memory devices and methods of manufacturing the same

The present invention relates to a method for generating a downlink frame including generating a first short sequence and a second short sequence indicating cell group information, generating a first scrambling sequence determined by the first synchronization signal, generating a second scrambling sequence determined by the first short sequence, scrambling the first short sequence with the first scrambling sequence, scrambling the second short sequence with at least the second scrambling sequence, and mapping a second synchronization signal including the scrambled first short sequence and the scrambled second short sequence in the frequency domain.

A semiconductor memory device includes a stack structure including gate electrodes vertically stacked on a substrate and a vertical channel part penetrating the gate electrodes, a bit line connected to the vertical channel part, and a plurality of conductive lines connected to the gate electrodes on the stack structure. The conductive lines form a plurality of stacked layers and include first conductive lines and second conductive lines. The number of the first conductive lines disposed at a first level from the substrate is different from the number of the second conductive lines disposed at a second level from the substrate. The first level is different from the second level.

Semiconductor memory devices

Growing community of inventors

Daejeon, South Korea

Hyeong Geun Park