Samsung Electronics Co., Ltd.

Hyeon-Ok Jung

Yoo-Sang Hwang

Chan-Sic Yoon

Ki-Seok Lee

Bong-Soo Kim

Dae-Ik Kim

Eun-Jung Kim

Je-min Park

Yong-kwan Kim

Se-Myeong Jang

Sung-Hee Han

Hyun-Chul Yoon

Tae-jin Park

Seok-Hyun Lim

Min-Su Choi

Tae-Yong Song

Do-Yeong Lee

In a method of forming active patterns, first patterns are formed in a first direction on a cell region of a substrate, and a second pattern is formed on a peripheral circuit region of the substrate. The first pattern extends in a third direction crossing the first direction. First masks are formed in the first direction on the first patterns, and a second mask is formed on the second pattern. The first mask extends in a fourth direction crossing the third direction. Third masks are formed between the first masks extending in the fourth direction. The first and second patterns are etched using the first to third masks to form third and fourth patterns. Upper portions of the substrate are etched using the third and fourth patterns to form first and second active patterns in the cell and peripheral circuit regions.

Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming an isolation pattern on a substrate to define active patterns each having a first contact region at a center portion thereof and second and third contact regions at edge portions thereof. The method further includes forming a buried gate structure at upper portions of the isolation pattern and the active patterns, forming a first insulation layer on the isolation pattern and the active patterns, and etching a portion of the first insulation layer and an upper portion of the first contact region to form a preliminary opening exposing the first contact region. The method still further includes etching the isolation pattern to form an opening, forming an insulation pattern on a sidewall of the opening, and forming a wiring structure contacting the first contact region in the opening.

Semiconductor devices and methods of manufacturing semiconductor devices

An electronic device may include a substrate, and a plurality of spaced apart pads on the substrate. Each of the pads may includes first, second, third, and fourth sides, the first and third sides may be opposite sides that are substantially straight, and the second and fourth sides may be opposite sides that are curved. Related methods, devices, and structures are also discussed.

Methods of forming electronic devices having pads using first and second masks

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Daejeon, South Korea

Hyeon-Ok Jung