Sungkyunkwan University

Hyeon Je Son

Sung Joo Lee

Hae Ju Choi

Sung Pyo Baek

Tae Ho Kang

Chan Woo Kang

Jin Hong Park

Jeong Ho Cho

Jae Ho Jeon

Min Je Kim

A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.

Super-steep switching device and inverter device using the same

A super-steep switching device is provided. The super-steep switching device may include a substrate, a semiconductor channel on the substrate, a source electrode and a drain electrode, which are disposed on the semiconductor channel and spaced apart from each other, a gate electrode overlapping a portion of the semiconductor channel and not overlapping a remaining portion of the semiconductor channel, and an insulating layer disposed between the gate electrode and the semiconductor channel and covering an entire surface of the semiconductor channel.

A negative transconductance device is disclosed. The negative transconductance device includes a first transistor having a P-type semiconductor channel, a second transistor having an N-type semiconductor channel, and a third transistor having an ambipolar semiconductor channel and positioned between the first and second transistors. A first drain electrode of the first transistor is electrically connected to a third source electrode of the third transistor, and a drain electrode of the third transistor is electrically connected to a second source electrode of the second transistor.

Negative transconductance device and multi-valued inverter logic device using the same

Growing community of inventors

Suwon-si, South Korea

Hyeon Je Son