Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Sungkyunkwan University

National Institute for Materials Science

Korea Institute of Ceramic Engineering and Technology

Shaperon Inc.

Hyeon Cheol Park

Daejin Yang

Chan Kwak

Jaeyeol Baek

Yoojeong Choi

Shinhyo Bae

Soonhyung Kwon

Kwang Hee Kim

Youngjin Cho

Doh Won Jung

Weonho Shin

Yun Sung Woo

Kyoung-Seok Moon

Giyoung Jo

Taewon Jeong

Kwanghee Kim

Yoon Chul Son

Jei Min Choi

Jae-young Choi

Jae Ho Lee

Minsoo Kim

Jong Wook Roh

Sang Mock Lee

Hyun-ho Kim

Eun Seog Cho

Hong Yeol Moon

Jang Jung Lee

Chul Byung Park

Seung-Jun Yoon

Wang Byung Chae

Byung Ki Ryu

Daeseok Song

Beomjun Joo

Jae-Ho Lee

Hyun Sik Kim

Jinyoung Hwang

Kwen-Woo Han

Hiesang Sohn

Tae Woo Kang

Hyun Wuk Kang

Kyung Hoon Kim

Hyeong Joon Seo

Takayoshi Sasaki

Sung Hee Lee

Eun-Hyoung Cho

Euncheol Do

Bu Youn Lee

Kwang Ho Choi

Eun-hyoung Cho

Mi Jeong Kim

Woong Ko

Mun Sub Kim

Il Yong Cho

Jin Yong Mo

Tae Won Jeong

Minoru Osada

Kimoon Lee

Keun Jeong Jang

Eun Sung Jo

Sung Goo Kim

Hyosug Lee

Tae Il Kim

Seung-Yong Seong

Seung Ho Hong

Tae Joo Kim

Jung Ah Cho

Byungki Ryu

Dong-Su Ko

Kyo Seung Kim

Ji-Ho Baek

Youn Sang Jang

Seung-Hyun Baik

Weon Ho Shin

Tae Sung Choi

Wan Soo Yang

Dowon Ahn

Keunwoo Cho

Rujun Ma

Myoung Pyo Chun

Keun Woo Cho

Jae-Young Choi

Byung-Ki Ryu

A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

Resist underlayer composition, and method of forming patterns using the composition

Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbOternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbOternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.

Dielectric material, device including the same, and method of preparing the dielectric material

A resist underlayer composition and a method of forming patterns using the same is disclosed. The resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent. Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.

Composition for resist underlayer, and pattern forming method using same

A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent:

A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,

Method of forming patterns using resist underlayer composition

Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:(1&#x2212;)KNaNbOM(ASb)O&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the same

A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.

A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times. 

Disclosed herein are an air conditioner includes a housing having an outlet, and a blade configured to open and close the outlet and having a plurality of holes. The blade includes a first side extending in a first direction, a second side extending in a second direction, and a block area in which none of the plurality of holes are formed, at least a number of the plurality of holes are disposed on a first line extending in the first direction, and a second line spaced in the second direction from the first line, respectively, where the second line extends in the first direction, and the block area comprises an area formed in the first direction between the first line and the second line.

Air conditioner

A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.

Relaxor-ferroelectric material and method of synthesizing the same and device including relaxor-ferroelectric material

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:AB.(1&#x2212;)(BiNa)TiO&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the dielectric material

A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, 

An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.

Electrode structure and touch detecting sensor using the same

A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent, 

Disclosed herein is an air conditioner. The air conditioner include a housing having a discharge port, a blade located in the discharge port where the blade is rotatable with respect to the housing, a blade driving member configured to rotate the blade, and an elastic member located between the blade and the blade driving member and the elastic member including a stopper coupleable to the blade driving member.

Growing community of inventors

Hwaseong-si, South Korea

Hyeon Cheol Park