Samsung Electronics Co., Ltd.

Hyeon-Cheol Kim

Yong-soo Oh

Sang-wook Lee

Keon Kuk

Seog Soon Baek

Chang-seung Lee

Sang-hyun Lee

Jae-sik Min

Jong-cheol Shin

Doo-jin Maeng

Kwang-joon Yoon

Sang-Ho Kim

Heon-Jong Shin

Yeong-Seop Lee

Eun-Jeong Park

A semiconductor integrated circuit device includes: a substrate which has a first conductivity type and in which a first amplifier area and a second amplifier area are defined; a first well which has a second conductivity type, a first pocket well which has the first conductivity type and is separated from the first well, and a first deep well which has the second conductivity type, surrounds the first pocket well, and is separated from the first well; and a second well which has the second conductivity type, a second pocket well which has the first conductivity type and is separated from the second well, and a second deep well which has the second conductivity type, surrounds the second pocket well, and is separated from the second well The first well, the first pocket well, and the first deep well are formed in the first amplifier area of the substrate, and the second well, the second pocket well, and the second deep well are formed in the second amplifier area of the substrate.

Semiconductor integrated circuit device

A silicidation blocking layer (SBL) pattern is formed on a substrate including an active region and a field region. The SBL pattern covers the field region and exposes the active region. A silicide layer is formed on the active region by reacting metal with silicon existing in the active region. An insulation layer is formed on the substrate including the silicide layer. An opening exposing the silicide layer is formed by selectively etching the insulation layer under a condition having an etching selectivity between the SBL and the insulation layer. Conductive material is filled up the opening. The field region of a substrate is sufficiently protected by the SBL pattern without any additional process so that the failure of a semiconductor device is effectively prevented because the flow of a leakage current through the field region is blocked.

Method of manufacturing a semiconductor device having a silicidation blocking layer

A method for manufacturing the same, wherein the monolithic ink-jet printhead includes a manifold for supplying ink, an ink chamber having a hemispheric shape, and an ink channel formed monolithically on a substrate; a silicon oxide layer, in which a nozzle for ejecting ink is centrally formed in the ink chamber, is deposited on the substrate; a heater having a ring shape is formed on the silicon oxide layer to surround the nozzle; a MOS integrated circuit is mounted on the substrate to drive the heater and includes a MOSFET and electrodes connected to the heater. The silicon oxide layer, the heater, and the MOS integrated circuit are formed monolithically on the substrate. Additionally, a DLC coating layer having a high hydrophobic property and high durability is formed on an external surface of the printhead.

Method for manufacturing a monolithic ink-jet printhead

This invention relates to an alignment apparatus for aligning a planar optical wave-guide element and an optical fiber block wherein alignment can be completed with more precision and less expense than conventional methods. The alignment apparatus comprising a lower plate; a sliding table mounted on the lower plate capable of horizontal displacement on the lower plate; an upper plate mounted to the sliding table; and, a jig disposed on the upper plate and fixed to rotational means and capable of rotation about the upper plate for holding the optical fiber block.

Alignment apparatus and method for optical fiber blocks

A bubble-jet type ink-jet printhead and manufacturing method thereof including a substrate integrally having an ink supply manifold, an ink chamber, and an ink channel; a nozzle plate having a nozzle on the substrate; a heater centered around the nozzle and an electrode for applying current to the heater on the nozzle plate; and an adiabatic layer on the heater for preventing heat generated by the heater from being conducted upward from the heater. Alternatively, a bubble-jet type ink-jet printhead may be formed on a silicon-on-insulator (SOI) wafer having a first substrate, an oxide layer, and a second substrate stacked thereon and include an adiabatic barrier on the second substrate. In the bubble-jet type ink-jet printhead and manufacturing method thereof, the adiabatic layer or the adiabatic barrier is provided to transmit most of the heat generated by the heater to ink under the heater, thereby increasing energy efficiency.

Method of manufacturing a bubble-jet type ink-jet printhead

A monolithic ink-jet printhead, and a method for manufacturing the same, wherein the monolithic ink-jet printhead includes a manifold for supplying ink, an ink chamber having a hemispheric shape, and an ink channel formed monolithically on a substrate; a silicon oxide layer, in which a nozzle for ejecting ink is centrally formed in the ink chamber, is deposited on the substrate; a heater having a ring shape is formed on the silicon oxide layer to surround the nozzle; a MOS integrated circuit is mounted on the substrate to drive the heater and includes a MOSFET and electrodes connected to the heater. The silicon oxide layer, the heater, and the MOS integrated circuit are formed monolithically on the substrate. Additionally, a DLC coating layer having a high hydrophobic property and high durability is formed on an external surface of the printhead.

Monolithic ink-jet printhead

A method for manufacturing an ink-jet printhead having a hemispherical ink chamber, wherein a nozzle plate is formed on a surface of substrate; a heater is formed on the nozzle plate; a manifold for supplying ink; an electrode is formed on the nozzle plate to be electrically connected to the heater; a nozzle is formed by etching the nozzle plate inside the heater; a groove for forming an ink channel is formed to expose the substrate so that the groove extends from the outside of the heater toward the manifold; an ink chamber is formed to have a diameter greater than the diameter of the heater and be hemispherical by etching the substrate exposed by the nozzle; an ink channel is formed to be in flow communication with the ink chamber and the manifold; and the groove is closed by forming a material layer on the nozzle plate.

Method for manufacturing ink-jet printhead having hemispherical ink chamber

An ink-jet printhead having a hemispherical ink chamber and a method for manufacturing the same, wherein the ink-jet printhead includes a substrate, in which a manifold for supplying ink, an ink chamber having a substantially hemispherical shape, and an ink channel for supplying ink from the manifold to the ink chamber are integrally formed; a nozzle plate having a multi-layered structure, in which a first insulating layer, a thermally conductive layer formed of a thermally conductive material, and a second insulating layer are sequentially stacked, and having a nozzle, formed at a location corresponding to the center of the ink chamber; a nozzle guide having a multi-layered structure and extending from the edge of the nozzle to the inside of the ink chamber; a heater formed on the nozzle plate to surround the nozzle, and an electrode formed on the nozzle plate to be electrically connected to the heater.

Ink-jet printhead having hemispherical ink chamber and method for manufacturing the same

Bubble-jet type ink-jet printhead and manufacturing method thereof

An inkjet printhead includes a nozzle plate having a nozzle, a substrate having an ink feed hole, and an intermediate layer interposed between the nozzle plate and the substrate, wherein the intermediate layer includes an ink chamber connected to the ink feed hole and the nozzle and a heating element surrounding the ink chamber. In the present invention, the nozzle, the ink chamber, and the ink feed hole are formed in a straight channel, thereby providing a high density printhead.

Ink-jet printhead having high nozzle density

A gate electrode structure of a semiconductor device and a manufacturing method thereof are provided. The gate electrode structure includes a first silicon layer pattern formed of a polycrystalline silicon layer and a second silicon layer pattern having surface roughness lower than that of the first silicon layer pattern formed on the first silicon layer pattern.

Manufacturing of gate electrodes having silicon of different grain sizes and different surface roughness

There are provided a concentric machining device and method. The concentric machining device is used to machine the outer curcumferential surface of a cylindrical body having an inner diameter and an outer diameter with respect to the center of the inner diameter so that the center of the outer diameter is identical with the center of the inner diameter. In the concentric machining device, the cylindrical body is mounted in a mounting means installed in a rotating means. The rotating means rotates the mounting means and the cylindrical body according to a rotation control signal. A photographing means photographs the cross-section of the cylindrical body. A controlling means generates the rotation control signal to rotate the rotating means at a predetermined angle when the cylindrical body is mounted, calculates an eccentricity being the difference between the inner diameter center of the cylindrical body and a rotation center of the rotating means from information about the photographed cross-section received from the photographing means, and generates a machining control signal corresponding to the eccentricity. A transferring means transfers the machining control signal, and an adjusting means adjusts the position of the cylindrical body according to the machining control signal received from the transferring means so that the inner diameter center of the cylindrical body is identical with the rotation center of the rotating means.

Concentric machining device and method

A concentricity processing apparatus and method employ a vision system to achieve precision-machining of products, even those having minute, tapered or complex-shaped inner diameters. The concentricity processing apparatus includes: a loading unit for loading the product or subject to be processed; a photographing unit for photographing the section of the subject to be processed as loaded into the loading unit; a display unit for displaying a section of the subject to be processed as photographed by the photographing unit; a controller for obtaining a concentricity value using at least two inside diameter values calculated by the display unit and at least two rotation angle values of the servo motor, and for calculating a machined amount in units of rotation angle with reference to the concentricity and the rotation angle corresponding thereto; a servo motor on which the loading unit is installed for rotating the loading unit by a rotation angle &thgr; input from the controller; a processing tool for machining a subject to be processed as rotated by the servo motor; and an X-Y stage on which the processing tool is loaded for moving the processing tool in a horizontal direction according to the machined amount D calculated by the controller. According to the present invention, it is possible to overcome the requirements for precision processing of the product and to remove marginal numerical value requirements when a tail stock and a circular bar are used by directly fixing the outer diameter to a chuck without using the tail stock and the circular bar in fixing the product.

Growing community of inventors

Seoul, South Korea

Hyeon-Cheol Kim