Samsung Electronics Co., Ltd.

HyeokJun Son

Wandon Kim

Minwoo Song

Namgyu Cho

Jinkyu Jang

Ohseong Kwon

Sangjin Hyun

Hyung-Seok Hong

Sangbom Kang

Sughun Hong

SungKee Han

A semiconductor device includes: an active fin disposed on a substrate; a gate structure overlapping the active fin; source/drain regions disposed on both sides of the gate structure and on the active fin; and contact structures respectively connected to the source/drain regions, wherein the gate structure includes: a pair of gate spacers spaced apart from each other to provide a trench; a first gate electrode disposed in the trench and extending along an upper surface and a lateral surface of the active fin; a second gate electrode disposed on the first gate electrode in the trench, wherein the first gate electrode is not disposed between the second gate electrode and the pair of gate spacers; and a gate insulating film disposed between the pair of gate spacers and interposed between the first gate electrode and the active fin.

Semiconductor device including a gate structure

A semiconductor device including a selectively nitrided gate insulating layer may be fabricated by a method that includes forming a first gate insulating layer on a substrate having a first region and a second region, performing a nitridation process on the first gate insulating layer, removing the first gate insulating layer from at least a portion of the first region to expose at least a portion of the substrate, forming a second gate insulating layer on at least the exposed portion of the first region of the substrate, thermally treating the first and second gate insulating layers in an oxygen atmosphere, forming a high-k dielectric on the first and second gate insulating layers, and forming a metal gate electrode on the high-k dielectric.

Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same

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Seoul, South Korea

HyeokJun Son