Samsung Electronics Co., Ltd.

Hyeogki Kim

Hyunjoon Kim

Tae-Sik Yun

Yoonmi Lee

JungDae Park

Kyoungsil Park

Kunhyung Lee

Dusik Bae

KiDoo Kim

Byung-Koog Ra

Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.

Method of processing substrate and method of fabricating semiconductor device using the same

A substrate transfer container comprises a housing including a plurality of substrate slots positioned within a gas chamber having an interior environment. Each substrate slot accommodates a substrate undergoing a substrate manufacturing process, the interior environment of the gas chamber being selectively sealed from an exterior environment. A detection unit at the housing is constructed and arranged to detect an environmental property of the interior environment of the gas chamber, and to generate a detection signal in response. A signal transmission module at the housing is configured to wirelessly transmit a detection signal received from the detection unit.

Substrate transfer container, gas purge monitoring tool, and semiconductor manufacturing equipment with the same

Growing community of inventors

Hwaseong-si, South Korea

Hyeogki Kim