Samsung Electronics Co., Ltd.

Hyen-wook Ju

Kyeong-seon Shin

Jeong-ho Bang

Kwang-kyu Bang

Ho-jeong Choi

Sang-Seok Kang

Kwang-Kyu Bang

Sang-seok Kang

Yong-won Lee

Jeong-kyu Kim

Provided are a semiconductor device including a fuse focus detector, a fabrication method thereof and a laser repair method. In a chip region, fuses may be formed at a first level. A fuse focus detector including first and second conductive layers may be formed in a scribe line region. The first conductive layer may be formed at the first level, while the second conductive layer may be formed at a different level. For a laser repair method, a target region may be divided into sub-regions. In one selected sub-region, the fuse focus detector may be laser scanned in a direction for a reflection light measurement providing information on a thickness of the fuse focus detector. Using the thickness information, a focus offset value of a fuse in the selected sub-region may be calculated. When the focus offset value is within an allowable range, fuse cutting may be performed.

Semiconductor device including fuse focus detector, fabricating method thereof and laser repair method using the fuse focus detector

A laser link structure used in semiconductor devices and a fuse box using the laser link structure preferably include a plurality of first conductive line patterns positioned in parallel at predetermined intervals, and a second conductive line pattern broadly formed on the plurality of first conductive line patterns for forming hole regions which link the second conductive line pattern to the plurality of first conductive line patterns. Preferably, at least one hole region is formed on each of the plurality of first conductive line patterns, and via holes are formed in the hole regions.

Laser link structure capable of preventing an upper crack and broadening an energy window of a laser beam, and fuse box using the same

A fuse box including make-links and a redundancy address decoder including the fuse box are provided. It is preferable that the fuse box includes a plurality of make-links for programming an address of a defective normal memory cell with an address of a corresponding redundant memory cell, and the address is a row address or a column address. The redundant address decoder includes a fuse box having a plurality of make-links for decoding an address of a defect cell and a redundant word line selection circuit for selecting a word line of a redundant cell corresponding to the address of the defect cell in response to a signal output from the fuse box.

Fuse box including make-link and redundant address decoder having the same, and method for repairing defective memory cell

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Suwon, South Korea

Hyen-wook Ju