Korea Institute of Science and Technology

Lg Electronics Inc.

Pusan National University

Hyejin Ryu

Miyoung Kim

Youngjun Kim

Jun Woo Choi

Yeerang Yun

Chaun Jang

Sang Yeop Lee

Seungheon Han

Kyoo Kim

Choongyu Hwang

Proposed is a magnetoresistance device, including a first layered magnetic material layer in which a magnetization direction is controlled depending on the voltage, a second layered magnetic material layer in which a magnetization direction is fixed in a predetermined direction, and a layered insulator layer interposed between the first and second layered magnetic material layers.

Voltage-controlled magnetoresistance device comprising layered magnetic material and layered ferroelectric material

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Snand Se, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal SnSe (where 0&#x3c;x&#x3c;1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

Method of improving thermoelectric performance of SnSe thermoelectric material

A mobile terminal includes a display module displaying an electronic document screen showing at least one full page among a plurality of pages of an electronic document, and the display module receives a first input for setting a number of pages to be turned among the plurality of pages. The mobile terminal further includes a controller which sets the number of pages in response to the first input, turns the set number of pages in response to a second input received proximate to the electronic document screen, and displays a subsequent page following the set number of pages turned on the electronic document screen.

Mobile terminal and method of controlling operation of the mobile terminal

Growing community of inventors

Seoul, South Korea

Hyejin Ryu