Samsung Electronics Co., Ltd.

Sungkyunkwan University

Hyejin Cho

Changhyun Lee

Byoungkeun Son

Sangwon Kim

Hyeonjin Shin

Minsu Seol

Dongwook Lee

Changsik Song

Juhyen Lee

Taewoo Kim

Dongcheol Jeong

Provided are a functionalized polycyclic aromatic hydrocarbon compound and a light-emitting device including the same. The functionalized polycyclic aromatic hydrocarbon compound is structurally stable, and exhibits high light-emission characteristics since aggregation caused by π-π stacking is inhibited, and thus may have high efficiency and long lifespan characteristics.

Functionalized polycyclic aromatic hydrocarbon compound and light-emitting device including the same

Three-dimensional (3D) nonvolatile memory devices include a substrate having a well region of second conductivity type (e.g., P-type) therein and a common source region of first conductivity type (e.g., N-type) on the well region. A recess extends partially (or completely) through the common source region. A vertical stack of nonvolatile memory cells on the substrate includes a vertical stack of spaced-apart gate electrodes and a vertical active region, which extends on sidewalls of the vertical stack of spaced-apart gate electrodes and on a sidewall of the recess. Gate dielectric layers extend between respective ones of the vertical stack of spaced-apart gate electrodes and the vertical active region. The gate dielectric layers may include a composite of a tunnel insulating layer, a charge storage layer, a relatively high bandgap barrier dielectric layer and a blocking insulating layer having a relatively high dielectric strength.

Three-dimensional semiconductor memory devices

Provided are a hardmask composition, a method of forming a pattern using the hardmask composition, and a hardmask formed using the hardmask composition. The hardmask composition includes a polar nonaqueous organic solvent and one of: i) a mixture of graphene quantum dots and at least one selected from a diene and a dienophile, ii) a Diels-Alder reaction product of the graphene quantum dots and the at least one selected from a diene and a dienophile, iii) a thermal treatment product of the Diels-Alder reaction product of graphene quantum dots and the at least one selected from a diene and a dienophile, or iv) a combination thereof.

Hardmask composition, method of forming pattern by using the hardmask composition, and hardmask formed using the hardmask composition

Three-dimensional (3D) nonvolatile memory devices include a substrate having a well region of second conductivity type (e.g., P-type) therein and a common source region of first conductivity type (e.g., N-type) on the well region. A recess is provided, which extends partially (or completely) through the common source region. A vertical stack of nonvolatile memory cells are provided on the substrate. This vertical stack of nonvolatile memory cells includes a vertical stack of spaced-apart gate electrodes and a vertical active region, which extends on sidewalls of the vertical stack of spaced-apart gate electrodes and on a sidewall of the recess. Gate dielectric layers are provided, which extend between respective ones of the vertical stack of spaced-apart gate electrodes and the vertical active region. The gate dielectric layers may include a composite of a tunnel insulating layer, a charge storage layer, a relatively high bandgap barrier dielectric layer and a blocking insulating layer having a relatively high dielectric strength.

Growing community of inventors

Anyang-si, South Korea

Hyejin Cho