Samsung Electronics Co., Ltd.

Hyeji Yoon

Jong-Kyu Kim

Sang-Kuk Kim

Jongsoon Park

Yil-hyung Lee

Woohyun Lee

Jongchul Park

An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

Ion beam apparatus with continuously changing parameter control

An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

Methods of fabricating semiconductor device

Ion beam apparatuses and methods for forming patterns using the same, and methods for manufacturing magnetic memory devices using the same

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Pyeongtaek-si, South Korea

Hyeji Yoon