Samsung Electronics Co., Ltd.

Hyebin Kim

Yohan Lee

Ho-Jun Lee

A flash memory device is provided. The flash memory device includes: a first memory cell; a second memory cell on the first memory cell; and a third memory cell between the first memory cell and the second memory cell. The first memory cell, the second memory cell and the third memory cell share a channel. The third memory cell is configured to block channel sharing between the first memory cell and the second memory cell based on a channel separation voltage provided in first to k-th program loops. The third memory cell is configured to connect the channel sharing between the first memory cell and the second memory cell based on a channel connection voltage provided to the third memory cell in a (k+1)-th program loop.

Growing community of inventors

Suwon-si, South Korea

Hyebin Kim