Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

The State University of New York

Ls Cable Ltd.

Amazon Technologies, Inc.

Liquavista B.v.

Hye-Young Park

Sung-lae Cho

Jin-il Lee

Young-Lim Park

Byoung-Jae Bae

Chaun-Gi Choi

Seung-Ho Jung

Chuan-Jian Zhong

Joo-Hee Jeon

Do-hyung Kim

Young-Sik Yoon

Ji-Eun Lim

Joon-Suk Oh

Jeong-Hee Park

Sung-Chan Jo

Choong-Man Lee

Hee-June Kwak

Sang-Wook Lim

Jun-Ho Mun

Jae-Cheol Park

Sang-Ji Park

Yiying Jia

Min-Jeong Oh

Eun-Young Lee

Hui-Won Yang

Byoung-Deog Choi

Gyu-Hwan Oh

Doo-Hwan Park

Hye-Hyang Park

Man-Sug Kang

Dae-Shik Kim

Yong-chan Kim

Yong-Chan Kim

Hyeon-Sik Kim

Hyun-Suk Kwon

Jin-ho Oh

Oh-Kyum Kwon

Su-Kyoung Yang

Chan-Woo Yang

Jung-Soo Nam

Myung-Hee Kim

Jin-II Lee

Jin-Il Lee

Oh-kyum Kwon

Myung-hee Kim

Joon-Ho Moon

A transparent organic light emitting display device may include a transparent base substrate, a semiconductor device disposed on the transparent base substrate, a display structure electrically connected to the semiconductor device, and a protection layer including a blue dye disposed on the display structure. The protection layer may improve the transparency of the transparent base substrate by calibrating discoloration of the transparent base substrate. Thus, the transparent display device including the protection layer may ensure an enhanced transparency. Further, the transparent display device may have an enhanced mechanical strength and an increased heat resistance because of the transparent base substrate.

Transparent display devices and methods of manufacturing transparent display devices

The present invention is directed toward core-shell nanoparticles, each comprising a ligand-capped metal shell surrounding a plurality of discrete, nonconcentric, metal-containing cores. Methods of making and using these nanoparticles are also disclosed.

Core-shell nanoparticles with multiple cores and method for fabricating them

A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

Transparent display device and method of manufacturing the same

A surfactant includes a hydrophobic functional group, a hydrophilic functional group and a linker disposed between the hydrophobic functional group and the hydrophilic functional group. The linker is connected to the hydrophobic functional group and the hydrophilic functional group. The linker has a cleavable bond with a bond energy lower than a bond energy of a bond included in the hydrophilic functional group and a bond included in the hydrophobic functional group.

Surfactant and method of manufacturing an electrowetting display device using the same

Core-shell nanoparticles with multiple cores and a method for fabricating them

A display device may include a first substrate, a lower barrier layer disposed on a rear surface of the first substrate, an upper barrier layer disposed on a front surface of the first substrate, a display structure disposed on the upper barrier layer, and a second substrate disposed on the display structure.

Display device and method of manufacturing a display device

A semiconductor device includes a substrate including an active region having an isolated shape and a field region. A gate insulation layer is provided on an upper surface of the active region of the substrate. A gate electrode is provided on the gate insulation layer and spaced apart from the boundary of the active region to cover the middle portion of the active region. An impurity region is provided under a surface of the active region that is exposed by the gate electrode.

Semiconductor device and method of manufacturing the semiconductor device

In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NRRR, where R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH).

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

A surfactant includes a hydrophobic functional group, a hydrophilic functional group and a linker disposed between the hydrophobic functional group and the hydrophilic functional group, and the linker is connected to the hydrophobic functional group and the hydrophilic functional group. The linker has a cleavable bond with a bond energy lower than a bond energy of a bond included in the hydrophilic functional group and a bond included in the hydrophobic functional group.

Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and including a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other.

Phase change memory device, storage system having the same and fabricating method thereof

A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.

Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same

Growing community of inventors

Seongnam-si, South Korea

Hye-Young Park