Lg Chem, Ltd

Lg Chem-Investment Ltd.

Lg Chemical Ltd.

Hye-Yeong Nam

Jung-Won Kang

Min-Jin Ko

Myung-Sun Moon

Dong-Seok Shin

Bum-Gyu Choi

Gwi-Gwon Kang

Young-Duk Kim

Sang-Min Park

Byung-Ro Kim

Won-Jong Kwon

The present invention relates to an organic silicate polymer prepared by mixing silane compound with organic solvent to prepare a first mixture, and hydrolyzing and condensing the first mixture by adding water and catalyst, the first mixture being selected from a group consisting of oxidized hydrosilane, cyclic siloxane, a second mixture of oxidized hydrosilane and silane or silane oligomer, and a third mixture of cyclic siloxane and silane or silane oligomer, a composition for forming an insulation film of semiconductor devices prepared by using the organic silicate polymer, a method for preparing an insulation film using the composition, and a semiconductor device comprising the insulation film.

Organic silicate polymer and insulation film comprising the same

The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.

Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same

The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention also provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b), wherein component (a) is an organosilane of the formula RRSiX(where each of Rand Rwhich may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0&#x2266;m+n&#x2266;3) and/or a partially hydrolyzed condensate thereof and wherein component (b) is an organic bridged silane of the formula RYSi-M-SiRZ(where each of Rand Rwhich may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si-M-Si).

Semiconductor interlayer dielectric material and a semiconductor device using the same

The present invention relates to a low dielectric material essential for a next generation electric device such as a semiconductor device, with a high density and high performance. In detail, the present invention provides: a process for preparing an organic silicate polymer comprising a polymerization step in the absence of homogenizing organic solvents, of mixing and reacting organic silane compounds with water in the presence of a catalyst to hydrolyze and condense the silane compounds, that is thermally stable and has good mechanical and crack resistance properties; and a coating composition for forming a low dielectric insulating film; and a process for preparing a low dielectric insulating film using the organic silicate polymer prepared according to the process, and an electric device comprising the low dielectric insulating film prepared according to the process.

Process for preparing organic silicate polymer

Process for preparing insulating material having low dielectric constant

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Cheongju, South Korea

Hye-Yeong Nam