Samsung Electronics Co., Ltd.

Hye-Sun Kim

Nam-su Ha

Jin-Hyo Kim

Il-Hyun Cho

Ji-Hwan Park

Kyung-Woo Lee

Jung-Hwan Choi

Jin-Sung Kim

Sung-do Choi

Yeong-Cheol Lee

Sang-Jun Park

Moon-Sik Jeong

Hyun-Moo Kim

Tae-Il Kim

Sung-Joon Jang

Jin-Kyoung Du

Joo-Byoung Yoon

Hyeon-hee Cha

Hyun-Soo Choi

Su-Jung Bae

Seong-Oh Lee

A method and apparatus for controlling power in a low-power multi-core system, including receiving task information from an Operation System (OS) kernel upon start and end of a task, estimating a future CPU usage using a current CPU usage in the task information, monitoring memory-related information in the task information, comparing a change in the current CPU usage with the monitored memory-related information, establishing a policy for power control based on the estimated CPU usage and the monitored memory-related information, and controlling on/off of multiple cores according to the established policy. By doing so, it is possible to solve the problems caused by performing DPM using only the CPU usage.

Method and apparatus for controlling power in low-power multi-core system

A power control method of a Central Processing Unit (CPU) in a multi-core system. The power control method includes acquiring current usage information of the CPU and system information, estimating a CPU usage of a next time interval based on the acquired current usage information, calibrating the estimated CPU usage of the next time interval based on the acquired system information, and determining a power control mode based on at least one of the acquired system information and the calibrated CPU usage of the next time interval.

Apparatus and method for power control of a central processing unit in a multi-core system

A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.

Semiconductor device having storage node electrode with protection film thereon and method of fabricating the same

Growing community of inventors

Suwon-si, South Korea

Hye-Sun Kim