Fairchild Korea Semiconductor Ltd.

Kt Corporation

Hye-Mi Kim

Jong-ho Park

Hyi-Jeong Park

Chang-Ki Jeon

Chang-ki Jeon

Sang-Bum Lee

Joo-Young Yoon

Chang-Seuk Ok

Se-Cheol Park

A contents distribution server using an identification code of contents is disclosed. The apparatus includes an interface providing unit configured to provide an interface for registration of the contents to a device, if a request for the registration of the contents is received from the device; an code information extraction unit configured to extract code information from input information through the interface; an identification code generation unit configured to generate the identification code by combining codes corresponding to the extracted code information, and a contents distribution unit configured to match the contents with the generated identification code, register the matched contents in a database and transmit the registered contents to a contents managing server with reference to the identification code.

Contents providing scheme using identification code

Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device using a DMOS device includes: a semiconductor substrate, in which a first conductive type well is formed; a first conductive type gate electrode formed on the semiconductor substrate with a gate insulating layer intervening between the gate electrode and the semiconductor substrate; a second conductive type body electrode formed on the semiconductor substrate and separated from the gate electrode; a first conductive type drain electrode formed on the semiconductor substrate and separated from the gate electrode and the body electrode; a second conductive type first body region formed in the well under the body electrode; a second conductive type second body region extending from the first body region to the gate insulating layer and formed in the well; a first conductive type source region formed in the second body region and extending from the first body region to the gate insulating layer; and a first conductive type source electrode extending from the source region to surround the gate electrode on the semiconductor substrate with an insulating layer intervening between the source electrode and gate electrode.

Semiconductor device and method of fabricating the same

Growing community of inventors

Seoul, South Korea

Hye-Mi Kim