Samsung Display Co., Ltd.

Hye Lim Kang

Dong Eon Lee

Moon Jung An

Hoo Keun Park

Dong Gyun Kim

Byung Ju Lee

Young Rag Do

Je Won Yoo

Chul Jong Yoo

Min Young Kim

A method for manufacturing a light-emitting element, and a display device including a light-emitting element are provided. A method for manufacturing a light-emitting element includes: preparing a base substrate and at least one semiconductor rod formed on the base substrate; a first separating including forming a first element structure, which includes a semiconductor rod of the at least one semiconductor rod and a first support formed around the outer surface of the semiconductor rod, and separating the first element structure from the base substrate; removing at least a part of the first support so as to partially expose the semiconductor rod, and forming a second element structure which includes the exposed semiconductor rod and a second support around the outer surface of the first support; and a second separating including separating the semiconductor rod from the second element structure.

Method for manufacturing light-emitting element using first and second supports, and display device comprising light-emitting element

A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; a first outer film around an outer surface of at least the active layer and extending in the first direction; and a second outer film around an outer surface of a portion of the first semiconductor layer on which the first outer film is not present.

Light emitting element, manufacturing method therefor and display device including same

A light-emitting element, a method of fabricating a light-emitting element, and a display device comprising a light-emitting element are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and second semiconductor layer, an electrode layer disposed on the second semiconductor layer, an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer and an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

Light-emitting element, method of fabricating the light-emitting element, and display device

A light-emitting element includes a light-emitting element core extending in a direction and including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a device active layer disposed between the first semiconductor layer and the second semiconductor layer, a device insulating film surrounding a lateral surface of the light-emitting element core, and a reflective film disposed on an outer lateral surface of the device insulating film and surrounding at least a lateral surface of the device active layer.

Light-emitting element, light-emitting element unit including the light-emitting element, and display device

A display device includes a substrate; a first electrode and a second electrode arranged to be spaced apart from each other on the substrate; a first insulating layer on the substrate; a light emitting element on the first insulating layer, located between the first electrode and the second electrode, and including a first end portion and a second end portion; a third electrode on the substrate and electrically connected to the first electrode and the first end portion; a fourth electrode on the substrate and electrically connected to the second electrode and the second end portion; a second insulating layer on the substrate and covering the light emitting element, the third electrode, and the fourth electrode; and a light diffusion layer on the second insulating layer and including a light diffusion particle.

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Yongin-si, South Korea

Hye Lim Kang