Samsung Electronics Co., Ltd.

Hye Kyung Jung

Byung-Lyul Park

Jinho Park

Gilheyun Choi

Jongmyeong Lee

Zungsun Choi

Provided are a metal interconnect of a semiconductor device and a method of fabricating the metal interconnect. The metal interconnect includes a metal line having a first end and a second end disposed on an opposite side to the first end, a via electrically connected to the metal line, and a non-active segment extending from the first end and including a void. Tensile stress is decreased to prevent a void from occurring under the via. Accordingly, line breakage due to electromigration is substantially prevented, thus improving electrical characteristics of the device.

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Seoul, South Korea

Hye Kyung Jung