Samsung Electronics Co., Ltd.

Hye Ju Kim

Jeong-Eun Kim

Young-Sik Lee

Sun-Mi Yoo

Ml-Hyang Lee

Hyo Bong Son

So Dam Hwang

A memory storage device includes a non-volatile memory including a plurality of memory blocks and a memory controller configured to control the non-volatile memory, wherein the memory controller is configured to provide host data including write data to the non-volatile memory, wherein the memory controller is configured to perform a garbage collection operation on the memory blocks to provide garbage collection data to the non-volatile memory when a free block count of the memory blocks is smaller than a first threshold value, and wherein the memory controller is configured to increase a capacity for providing the host data when the free block count of the memory blocks is greater than a second threshold value less than the first threshold value and a valid page count of the first memory block among the memory blocks is less than a third threshold value.

Memory storage device and electronic device including a nonvolatile memory with configurable capacity for providing host data

A memory device, as provided herein, may include an invalidation bit circuit and a cell array. In methods for controlling such memory devices, the invalidation bit circuit may receive an invalid control command from a memory controller to update the invalid bit data to one of first and second states different from each other, the invalidation bit circuit may receive a read control command from the memory controller and may provide an invalid signal when the invalid bit data is in the first state, the invalidation bit circuit may transmit a data request when the invalid bit data is in the second state, and the cell array may receive the data request and provide data.

Memory devices and methods for controlling the same

Growing community of inventors

Seongnam-si, South Korea

Hye Ju Kim