Yonsei University

Hynix Semiconductor Inc.

Wisol Co., Ltd.

Hye Jin Choi

Mann Ho Cho

Tae Hyeon Kim

Jae Hyung Choi

Yo Sep Choi

Jung Rae Noh

Yukihiro Noro

Han Bum Park

Ji Min Chae

Ju Heyuck Baeck

Zhe Zhu Han

Jae Jin Song

Rong Xu

Dong Xu Kang

Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.

Thermoelectric material, method of fabricating the same, and thermoelectric device

The present invention relates to a stacked piezoelectric ceramic element and can provide a stacked piezoelectric ceramic element produced by stacking two or more ceramic green sheets, the stacked piezoelectric ceramic element having a structure in which a ceramic porous or defective part constituting the stacked piezoelectric ceramic element is impregnated with an organic resin, thereby improving waterproof performance capable of preventing the deterioration of insulation resistance in a highly humid environment.

Stacked piezoelectric ceramic element

A variable resistive memory device includes an array of a plurality of memory cells. Each of the plurality of memory cells includes first and second electrodes, and an SbSematerial layer (where m and n are positive numbers, respectively) interposed between the first electrode and the second electrode. The SbSematerial layer includes a separation structure in which a plurality of Sb atoms are in contact with a plurality of Se atoms.

Variable resistive memory device and method of fabricating the same

Growing community of inventors

Gyeonggi-do, South Korea

Hye Jin Choi