Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Samsung Sdi Co., Inc.

Hye Hyang Park

Ji Yong Park

Seong-Min Kim

Jinkoo Chung

Jinhyun Park

Eun Young Lee

Eun Jung Lee

Hui-Won Yang

Ki Yong Lee

Joo Hee Jeon

Hyeon Sik Kim

Byoung Deog Choi

Sun A Yang

Youn Chul Oh

Won Seok Kang

A display substrate including a base substrate including a plurality of pixel areas, each of the plurality of pixel areas including an emission area and a transmission area, a pixel circuit layer disposed in the emission area and including at least one transistor, a pixel electrode disposed on the pixel circuit layer and connected to the pixel circuit layer, a hole injection layer selectively disposed on the pixel electrode in the emission area, an emission layer disposed on the hole injection layer of the emission area, an electron injection layer disposed on the base substrate on which the emission layer is disposed; and a common electrode disposed on the base substrate on which the electron injection layer is disposed.

Display substrate

A display device includes a substrate including a first area displaying an image and a second area adjacent to the first area, the second area transmitting external light, a first electrode and a second electrode disposed in the first area and overlapping each other, an emission layer disposed between the first electrode and the second electrode in the first area, a first semiconductor layer disposed in the first area, and a second semiconductor layer disposed in the second area.

Display device with light transmission area

An organic light-emitting display includes a substrate, a thin film transistor on the substrate, an organic light-emitting diode electrically connected to the thin film transistor, and a photo sensor having a plurality of photo diodes connected to one another in parallel.

Photo sensor and organic light-emitting display using the same

A thin film transistor including a lightly doped drain (LDD) region or offset region, wherein the thin film transistor is formed so that primary crystal grain boundaries of a polysilicon substrate are not positioned in the LDD or offset region.

Thin film transistor with LDD/offset structure

A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other, wherein an area surrounded by the primary grain boundaries is larger than 1 &#x3bc;m, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.

Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same

A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 &#x3bc;m, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.

Growing community of inventors

Suwon, South Korea

Hye Hyang Park