Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Hye-Hyang Park

Chaun-Gi Choi

Joo-Hee Jeon

Eun-Young Lee

Hui-Won Yang

Seung-Ho Jung

Hyeon-Sik Kim

Mu-Gyeom Kim

Yong-Sung Park

Ki-Ju Im

Hyun-Sun Park

Tae-Young Kim

Sung-Hoon Yang

Hye-Young Park

Woo-Seok Jeon

Su-Kyoung Yang

Chan-Woo Yang

Shin-Hyuk Yang

Yung-Bin Chung

Bo-Geon Jeon

Eun-Jeong Cho

Hui-won Yang

A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Display device

A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

Transparent display device and method of manufacturing the same

A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

Substrate structure

An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.

Oxide semiconductor devices, methods of forming oxide semiconductor devices and organic light emitting display devices including oxide semiconductor devices

An organic light emitting display apparatus includes a substrate, a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor, a passivation layer covering the light conversion layer, a first electrode on the passivation layer, an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

Organic light emitting display apparatus

Organic light emitting display apparatus having a light conversion layer

A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

Double gate thin-film transistor and OLED display apparatus including the same

A method of fabricating a polycrystalline silicon thin film for a thin film transistor (TFT), a mask pattern used for the method, and a method of fabricating a flat panel display device using the method and the mask pattern. In one embodiment, a mask pattern includes a plurality of regions, each of the regions having at least one of one or more transparent portions or one or more non-transparent portions. A total area of the one or more transparent portions and the one or more non-transparent portions in one of the regions is substantially equal to a total area of the one or more transparent portions and the one or more non-transparent portions in at least one other of the regions. A total area of the transparent portions in the mask pattern is different from a total area of the non-transparent portions in the mask pattern.

Mask pattern, method of fabricating thin film transistor, and method of fabricating organic light emitting display device using the same

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Yongin-si, South Korea

Hye-Hyang Park