Samsung Electronics Co., Ltd.

Sungkyunkwan University

Hyangsook Lee

Jinseong Heo

Sanghyun Jo

Eunha Lee

Yunseong Lee

Junghwa Kim

Sangwook Kim

Jooho Lee

Jeonggyu Song

Taehwan Moon

Dongjin Yun

Changseok Lee

Seunggeol Nam

Myoungho Jeong

Hyeonjin Shin

Junho Lee

Seongjun Park

Chan Kwak

Hyukjae Kwon

Yeonchoo Cho

Keunwook Shin

Minsu Seol

Haeryong Kim

Hyunjae Song

Younsoo Kim

Seyun Kim

Mokwon Kim

Jinyoung Hwang

Yun Sung Woo

Eunae Cho

Hagyoul Bae

Boeun Park

Dukhyun Choe

Changhoon Jung

Weonho Shin

Hyoungsub Kim

Yongsu Kim

Youngnam Kwon

Yong-hee Cho

Sunghoon Park

Wonsik Ahn

Seong Heon Kim

Insun Jung

Jaegwan Chung

Seongheon Kim

Sunjung Byun

Daeun Yu

Woon Jung Paek

An electronic device includes: a substrate including a source, a drain, and a channel between the source and the drain; a gate electrode arranged above the substrate and facing the channel, the gate electrode being apart from the channel in a first direction; and a ferroelectric thin film structure between the channel and the gate electrode, the ferroelectric thin film structure including a first ferroelectric layer, a crystallization barrier layer including a dielectric material, and a second ferroelectric layer, which are sequentially arranged from the channel in the first direction. The average of sizes of crystal grains of the first ferroelectric layer may be less than or equal to the average of sizes of crystal grains of the second ferroelectric layer, and owing to small crystal grains, dispersion of performance may be improved.

Electronic device including ferroelectric thin film structure

Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfOlayer to form a compound of HfAO(0<x<1, z is a real number). An uppermost layer of the plurality of layers is thickest among the plurality of layers. The first conductive layer contacts the uppermost layer.

Thin film structure and electronic device including the same

A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which <112> crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the <112> crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.

Thin film structure and semiconductor device comprising the same

Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

Electronic device and method of manufacturing the same

A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.

Method of growing two-dimensional transition metal chalcogenide film and method of manufacturing device including the same

A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

Semiconductor device and semiconductor apparatus including the same

Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a <hk0>, <h00>, or <0k0> direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

Dielectric thin-film structure and electronic device including the same

Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.

Electronic devices and methods of manufacturing the same

Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a &#x3c;hk0&#x3e;, &#x3c;h00&#x3e;, or &#x3c;0k0&#x3e; direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 &#x3a9;/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.

Conductor and method of manufacturing the same

Growing community of inventors

Hwaseong-si, South Korea

Hyangsook Lee