Kabushiki Kaisha Toshiba

Hyangmi Jung

Takeshi Gotanda

Yuko Nomura

Rei Hasegawa

Isao Takasu

Satomi Taguchi

Kohei Nakayama

Fumihiko Aiga

Kenji Todori

Go Kawata

Atsuko Iida

Atsushi Wada

Yoshihiko Nakano

Hideyuki Nakao

Mitsunaga Saito

Shigehiko Mori

According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.

Detection element and detector

A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.

Photoelectric conversion element, and method and apparatus for manufacturing the same

According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 &#x3bc;m or more.

Radiation detector and method for manufacturing the same

According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.

Producing method of radiation detection element and radiation detection element

According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.

According to one embodiment, a radiation detector includes first, and second conductive layers, and an organic layer. The organic layer is provided between the first and second conductive layers. A first thickness of the organic layer along a first direction from the second conductive layer toward the first conductive layer is 1 &#x3bc;m or more. The organic layer includes a first compound of a first conductivity type, and a second compound of a second conductivity type. A first value of (0.9&#xb7;&#x3bb;)/(w&#xb7;cos &#x3b8;) for a first peak of X-ray analysis of the organic layer is not less than 13 nm and not more than 19 nm. The first value is obtained from a first Bragg angle &#x3b8;(radians), a first full width at half maximum w(radians) of the 2&#x3b8;peak, and an X-ray wavelength &#x3bb; (nm). The 2&#x3b8;is not less than 0.0750 radians and not more than 0.1100 radians.

Radiation detector

An solar cell of an embodiment includes a first electrode, an electron transport layer containing a metal oxide, a self-assembled monolayer, a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and a second electrode. The self-assembled monolayer includes a fullerene-containing compound having a fullerene portion including a fullerene or a fullerene derivative, an absorption group to the metal oxide, and a bond group bonding the fullerene portion and the absorption group. The bond group contains a bivalent aromatic hydrocarbon group and a bivalent organic group which includes a carbon atom chain having 1 to 18 single-bonded carbon(s) or an atom chain in which a part of the carbon atom chain is substituted by at least one element selected from oxygen, nitrogen, and sulfur, as a main chain.

Solar cell

A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.

Photoelectric conversion device

A photoelectric conversion device of an embodiment includes, in sequence: a substrate; a first electrode; a photoelectric conversion layer containing a perovskite compound and a solvent; and a second electrode. The perovskite compound has a composition represented by a composition formula of ABX. The A represents at least one selected from a monovalent cation of a metal element and a monovalent cation of an amine compound. The B represents a bivalent cation of a metal element. The X represents a monovalent anion of a halogen element. The number of molecules of the solvent with respect to one crystal lattice of the perovskite compound ranges from 0.004 to 0.5.

According to one embodiment, a photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer and a first layer. The photoelectric conversion layer is provided between the first electrode and the second electrode. The first layer is provided between the first electrode and the photoelectric conversion layer. The first layer includes at least a first metal oxide. The first layer has a plurality of orientation planes. At least one of the orientation planes satisfies the relationship L&#x3e;L, where Lis a length of the one of the plurality of orientation planes, and Lis a thickness of the first layer along a first direction. The first direction is from the first electrode toward the second electrode.

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Yokohama, Japan

Hyangmi Jung