Samsung Display Co., Ltd.

Yonsei University

Hwi Jun Kim

Hye Jung Chang

Eun Soo Park

Do Hyang Kim

Jin Kyu Lee

Jung Chan Bae

Eun Young Jeong

A display device includes a substrate including a pixel area and a transmission area, and a pixel circuit disposed in the pixel area. The pixel circuit includes a first thin-film transistor included in a first multi-layer film, and a second thin-film transistor included in a second multi-layer film on the first multi-layer film. The first thin-film transistor and the second thin-film transistor are electrically connected to each other. The display device also includes a display element disposed on the second multi-layer film and including a pixel electrode electrically connected to the second thin-film transistor via a contact hole defined in the second multi-layer film, an opposite electrode facing the pixel electrode, and an intermediate layer between the pixel electrode and the opposite electrode.

Display device

Provided is a Nd-based two-phase separation amorphous alloy by adding an element having a big difference in heat of mixing in a Nd-based alloy with a superior amorphous formability through an inherent characteristic of compositional elements and consideration of thermodynamics, at the time of forming amorphous phase, to thereby enable two-phase separation amorphous alloy during solidification. The Nd-based two-phase separation amorphous alloy is represented as a general equation Nd(TM)(D)wherein TM is a combination selected from A-B, A-C and B&#x2014;C when an element group of A consists of Y, Ti, Zr, La, Pr, Gd and Hf, an element group of B consists of Fe and Mn, and an element group of C consists of Co, Ni, Cu and Ag, wherein the content of the element group which constitutes the combination is 5 atomic weight % or greater, and the element selected from each of the element group is at least one element, and the content of one element selected from each of the element group does not exceed 50 atomic weight %, wherein the content of the element group of B is less than that of the element group of C when TM is a B&#x2014;C combination, and wherein D is at least one selected from the group consisting of Al, B, Si and P, and a and b have the range of 20&#x2266;a&#x2266;70, 5&#x2266;b&#x2266;30, and a+b&#x2267;40 in terms of atomic weight %.

Nd-based two-phase separation amorphous alloy

Growing community of inventors

Yongin-si, South Korea

Hwi Jun Kim