Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Hwei-Jay Chu

Chung-Ju Lee

Chieh-Han Wu

Cheng-Hsiung Tsai

Hsin-Chieh Yao

Chih-Wei Lu

Ming-Han Lee

Shin-Yi Yang

Wei-Hao Liao

Hsi-Wen Tien

Yu-Teng Dai

Nyan-Hwa Tai

Chi-Young Lee

Tzu-Hui Wei

An-Dih Yu

An interconnection structure, along with methods of forming such, are described. The structure includes a first conductive feature having a first thickness, a first dielectric material disposed adjacent the first conductive feature, and the first dielectric material has a second thickness greater than the first thickness. The structure further includes a second conductive feature disposed adjacent the first dielectric material, a first etch stop layer disposed on the first conductive feature, a second etch stop layer disposed on the first dielectric material, and a second dielectric material disposed on the first etch stop layer and the second etch stop layer. The second dielectric material is in contact with the first dielectric material.

Semiconductor device structure and methods of forming the same

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a conductive line over the substrate. The semiconductor device structure also includes a catalyst structure over the conductive line and a carbon-containing conductive via directly on the catalyst structure. The semiconductor device structure further includes a dielectric layer surrounding the carbon-containing conductive via.

Structure and formation method of semiconductor device with carbon-containing conductive structure

A semiconductor structure includes a first metallization feature, a first dielectric structure over the first metallization feature, a second metallization feature embedded in the first dielectric structure, a via structure between the first metallization feature and the second metallization feature, and a first insulating layer between the first dielectric structure and the first metallization feature, and between the first dielectric structure and the via structure. The first metallization feature extends along a first direction, and the second metallization feature extends along a second direction different from the first direction. The first insulating layer covers first sidewalls of the via structure along the second direction.

Semiconductor structure and method for forming the same

A method for manufacturing a semiconductor structure includes forming a trench in a dielectric structure; forming a spacer layer on a lateral surface of the dielectric structure exposed by the trench; after forming the spacer layer, forming a first electrically conductive feature in the trench; removing at least portion of the dielectric structure to form a recess; forming an etch stop layer in the recess and over the first electrically conductive feature; and after forming the etch stop layer, depositing a dielectric layer in the recess and over the first electrically conductive feature.

Semiconductor structure having air gaps and method for manufacturing the same

A method for forming a semiconductor structure includes forming a first cap layer over a metal layer. The method also includes patterning the metal layer and the first cap layer to form openings exposing the gate structure, and forming a first dielectric layer in the openings, and patterning the first cap layer to form a via cap plug over the metal layer. The method also includes forming a second dielectric layer over the via cap plug and the metal layer, and forming a trench in the second dielectric material to expose the via cap plug. The method also includes removing the via cap plug to enlarge the trench and filling the trench with a conductive material.

The present invention provides a method for fabricating a conductive paste comprising the following steps: (a) preparing an organic medium and a mixed powder, wherein the organic medium contains an organic solvent, a resin and a first anionic surfactant, and the mixed powder contains a carbide and a doped-polyaniline, wherein the doped-polyaniline is produced by co-doping a polyaniline with a second anionic surfactant in an acid; and (b) mixing the organic medium and the mixed powder to obtain the conductive paste, which has a significantly improved conductivity.

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Hsinchu, Taiwan

Hwei-Jay Chu