Samsung Electronics Co., Ltd.

Hwayoung Lee

Junho Yoon

Dongjin Lee

Byungmoon Bae

Heejae Nam

Junggeun Shin

Hyunsu Sim

Junyun Kweon

Yeongbeom Ko

Wooju Kim

Jungseok Ryu

A semiconductor device includes a first chip structure including a wiring structure disposed on a circuit elements, and first bonding metal layers and a first bonding insulating layer on the wiring structure, an upper surface of the first chip structure having an edge region and an inner region surrounded by the edge region, a second chip structure disposed on an inner region of the upper surface of the first chip structure, and including second bonding metal layers respectively bonded to the first bonding metal layers, a second bonding insulating layer bonded to the first bonding insulating layer, and a memory cell layer on the second bonding metal layers and the second bonding insulating layer, an insulating capping layer disposed on an upper surface of the second chip structure and extending to the edge region, and a connection pad disposed on a region of the insulating capping layer.

Semiconductor device and method of manufacturing the same

A method of processing a substrate includes mounting a substrate on a concave mounting surface of a mounting table and deforming a surface of the substrate into a concave shape; detecting, by a height sensor, a height of the surface of the substrate in a vertical direction; determining positions of a plurality of first focus points based on height data of the surface of the substrate, detected by the height sensor; and forming a first modification layer in the substrate by irradiating the plurality of first focus points with a laser beam.

Method of processing substrate

A semiconductor substrate may include a plurality of semiconductor chips and a protection pattern. The semiconductor chips may be divided by two scribe lanes intersecting each other. Corners of the semiconductor chips may be disposed at the intersection of the two scribe lanes. The protection pattern may be arranged at the intersection of the scribe lanes to surround the corners of the semiconductor chips. Thus, the corners of the semiconductor chips may be protected by the protection pattern form colliding with each other in a following grinding process.

Semiconductor substrate and method of sawing the same

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Hwaseong-si, South Korea

Hwayoung Lee