Samsung Electronics Co., Ltd.

Hwanwoong Kim

Hongsuk Lee

Kyungho Lee

Eunsub Shim

Jungbin Yun

Jihun Kim

Seungjoon Lee

Taesub Jung

Jung Bin Yun

Jungwook Lim

Jueun Park

Youjin Jeong

A pixel array including pixels arranged in a matrix shape is provided. The pixels have a same structure and are separated from each other by front deep trench isolation (FDTI). A first pixel among the pixels includes a first floating diffusion region, a first group of photoelectric conversion elements, a first group of charge transfer transistors, a first source follower transistor, and a first transistor, a second transistor, and a first reset transistor connected in series between the first floating diffusion region and a voltage supply line. One of the first transistor, the second transistor, and the first reset transistor is formed in a first sub-pixel region. At least another one of the first transistor, the second transistor, and the first reset transistor is formed in a second sub-pixel region. The first sub-pixel region and the second sub-pixel region are separated from each other by the FDTI.

Pixel array and devices including the same

An image sensor includes: a first pixel connected to a column line; and a second pixel connected to the column line. Each of the first pixel and the second pixel includes: one photodiode; a first floating diffusion region; a second floating diffusion region; one first transistor connected between the one photodiode and the first floating diffusion region; a second transistor connected between the first floating diffusion region and the second floating diffusion region; a third transistor connected to the second floating diffusion region; a fourth transistor including a gate connected to the first floating diffusion region; and a fifth transistor including a drain connected to a source of the fourth transistor and a source connected to the column line. The second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are electrically connected without an intermediate transistor.

Image sensor controlling a conversion gain, imaging device having the same, and method of operating the same

Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

Image sensor controlling a conversion gain imaging device having the same, and method of operating the same

An image sensor includes: a pixel array including pixels and reference pixels; an analog sensing circuit configured to sense signals from the pixels and the reference pixels; and a digital logic circuit configured to receive the sensed signals from the analog sensing circuit and configured to compensate signals corresponding to the pixels from among the sensed signals by using signals corresponding to the reference pixels from among the sensed signals, wherein each of the reference pixels is at least partially surround by the pixels.

Image sensor including pixels and reference pixels, operating method of the image sensor, and electronic device including the image sensor

Growing community of inventors

Namyangju-si, South Korea

Hwanwoong Kim