Samsung Sdi Co., Inc.

Hwansung Cheon

Jaehyun Kim

Seungyong Chae

Ran Namgung

Kyung Soo Moon

Yoong Hee Na

Changsoo Woo

Kyungsoo Moon

Jimin Kim

Seung Yong Han

Eunmi Kang

Taeho Kim

Yong Tae Kim

Seung Ryong Han

Sangkyun Im

Sungil Moon

Hyungseok Park

Taegeun Seong

Seol Hee Lim

Bukeun Oh

Gyeong Ryeong Bak

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition

Semiconductor photoresist composition and method of forming patterns using the composition

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —ORor —OC(═O)R.

A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

Semiconductor resist composition, and method of forming patterns using the composition

A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

Disclosed are a composition for depositing a thin film including an organometallic compound including strontium, barium, or a combination thereof; and at least one unshared electron pair-containing compound represented by Chemical Formula 1, a method of manufacturing a thin film using the composition for depositing the thin film, and the thin film manufactured from the composition for depositing the thin film, and a semiconductor device including the thin film.

Composition for depositing thin film, manufacturing method for thin film using the composition, thin film manufactured from the composition, and semiconductor device including the thin film

Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask. 

Semiconductor photoresist composition, and method of forming patterns using the composition

A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent:  wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: 

A semiconductor resist composition includes an organometallic compound represented by Formula I and a solvent: wherein L includes at least one alkylene group in the main chain. A pattern may be formed using the composition. The pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio. 

A composition for forming an electrode includes a conductive powder, a glass frit, an organic binder, and a solvent, wherein the organic binder includes a polymer including a first structural unit selected from a structural unit represented by Chemical Formula 1A, a structural unit represented by Chemical Formula 1B, and a combination thereof, and the a second structural unit represented by Chemical Formula 2.  Each substituent of Chemical Formula 1A, Chemical Formula 1B and Chemical Formula 2 is the same as in the detailed description.

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