Lg Electronics Inc.

Lg Display Co., Ltd.

Lg Innotek Co., Ltd.

Hwankuk Yuh

Changseo Park

Jinhong Park

Kiseong Jeon

Sangdae Park

Sungjin Park

Seonock Kim

Dohyung Lee

Hoon Hur

HyeonHo Son

Younghak Chang

Hyosang Yu

Hyeonho Son

Jaegwang Um

HanSaem Kang

Sunghyun Moon

Byeongjun Choi

Jina Jeon

Sunju Lee

Sungguk Lee

Jiho Lee

Youngjoo Yee

Eunah Lee

Sangyoul Lee

Hyunggu Kim

Kangsuk Lee

Joonkwon Moon

Taesu Oh

Seonhoo Kim

Youngkyu Jeong

Jeongtak Oh

Byungsoo An

Heemin Yun

Jungyoun Rue

KyungHan Seo

Seung Ouk Noh

Sangwook Byun

Sangyeol Lee

Hansaem Kang

Kyunghan Seo

Provided is a display device. The display device includes a substrate, a display panel including a display disposed on a front surface of the substrate and a flexible base material extending from the display to surround a portion of each of a side surface and a rear surface of the substrate, and a support layer disposed between the side surface of the substrate and the flexible base material to support the flexible base material. The flexible base material includes: a pair of curved portions spaced apart from the support layer and a side cover portion that is configured to connect the pair of curved portions to each other and is in contact with the support layer.

Display device having support module on side surface of substrate

A display device, including a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting devices electrically connected to the metal pads. A respective semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer, a conductive electrode on the p-type semiconductor layer; and a passivation layer configured to surround the respective semiconductor light emitting device and including a through hole through which the conductive electrode is exposed. Further, the conductive electrode includes a protruding portion protruding through the through hole of the passivation layer and overlapping outer surfaces of the passivation layer. Also, the protruding portion of the conductive electrode contacts a corresponding metal pad, and a width of the protruding portion of the conductive electrode is greater than a width of the corresponding metal pad.

Display device using semiconductor light emitting diode

A display device can include a substrate including a plurality of first sub-pixels, a plurality of second sub-pixels, a plurality of third sub-pixels; a plurality of first semiconductor light emitting devices disposed in the plurality of first sub-pixels, and configured to generate first color light of a first main wave; a plurality of second semiconductor light emitting devices disposed in the plurality of second sub-pixels, and configured to generate second color light of a second main wave; and a plurality of third semiconductor light emitting devices disposed in the plurality of third sub-pixels, and configured to generate third color light of a third main wave, in which at least some of the plurality of first semiconductor light emitting devices have different light emitting regions to compensate for a wave deviation of the first main wave.

Display apparatus

Discussed is a display device using a semiconductor light emitting diode disposed on a substrate, a planarization layer stacked on the substrate while defining a hole that is a region in which the semiconductor light emitting diode is disposed, a light-transmitting layer filling the hole, and a reflective layer formed along at least one surface of the substrate and the planarization layer defining an inner surface of the hole, wherein the hole is formed so that a width thereof expands as a distance from the substrate increases.

A charging system is a charging system comprising a charger for charging an electric vehicle, in which the charger comprises: a base; a charger provided with a contact-type charging terminal that is in contact with or separated from a charging terminal disposed on a lower surface of the electric vehicle; a main cylinder connected to the base and supplying hydraulic pressure; a hydraulic regulator connected to the main cylinder and provided with an inner flow path formed therein; a first hydraulic cylinder respectively connected to the hydraulic regulator and the charger and communicating with the inner flow path; and a second hydraulic cylinder each connected to the hydraulic regulator and the base and communicating with an inner flow path.

Charging system

The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly. The present invention is characterized in that: the semiconductor light emitting diodes respectively include a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer enclosing the semiconductor light emitting diode and provided with a through hole for exposing the conductive electrode; one end portion of the semiconductor light emitting diodes is divided into a first portion in which the conductive electrode is exposed, and a second portion in which the passivation layer is exposed; and the maximum width of the metal pad is set to a range of the width to twice the width of the second portion.

The present invention relates to a display device and, more particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises: a substrate including a plurality of metal pads; and a green semiconductor light emitting element and a blue semiconductor light emitting element, which are electrically connected to the metal pads through self-assembly, wherein the green semiconductor light emitting element and the blue semiconductor light emitting element include identification parts having different shapes so as to be distinguishable from each other when connected to the substrate.

Display device using semiconductor light emitting element, and manufacturing method therefor

The present invention relates to a display device and, more particularly, to a transfer head for a semiconductor light-emitting device applied to the display device and a method for transferring a semiconductor light-emitting device. The transfer head for a semiconductor light-emitting device, according to the present invention, comprises: a base substrate; and an electrode unit disposed on the base substrate to generate an electrostatic force by charging an un-doped semiconductor layer of the semiconductor light-emitting device with electric charges, wherein the base substrate and the electrode unit are formed of light-transmitting materials so that at least a part of the semiconductor light-emitting device is viewable through the base substrate and the electrode unit in sequence.

Transfer head and transfer system for semiconductor light-emitting device and method for transferring semiconductor light-emitting device

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light-emitting diode. The display device according to the present invention comprises: a substrate having a wiring electrode formed thereon; a plurality of semiconductor light-emitting diodes electrically connected to the wiring electrode; an insulating layer provided to fill space between the semiconductor light-emitting diodes; a polarizing filter layer which is overlapped on the insulating layer and filters light incident into a specific direction; and a wavelength conversion layer which is overlapped on the polarizing filter layer and provided to convert the wavelength of light.

Display device using semiconductor light-emitting diode

A growth substrate including micro-light emitting diode (LED) chips and a method of manufacturing a light emitting diode display using the growth substrate are disclosed. The growth substrate includes LED chips. The LED chips are divided into n groups each including p LED chips, where each of the n and p is an integer equal to or greater than 2. At least two of the n groups are adjacent to each other. Each of the n includes a first LED chip having a directionality toward a first direction and a second LED chip having a directionality toward a second direction different from the first direction.

Growth substrate including micro-light emitting diode chips and method of manufacturing light emitting diode display using the same

A display apparatus including a display unit; a plurality of semiconductor light emitting elements having at least a first conductive electrode to form individual pixels of the display unit; an adhesive layer disposed between adjacent semiconductor light emitting elements; a thin-film transistor having a gate region disposed closer to an upper surface of the display unit than a source region and a drain region; a via hole formed in the adhesive layer; and a via hole electrode extending in the via hole and electrically connecting the at least one conductive electrode of a corresponding semiconductor light emitting element and the source-drain electrode of the thin-film transistor.

Display apparatus using semi-conductor light-emitting device

The present invention relates to a display device and, particularly, to a display device using a semiconductor light-emitting device. The display device according to the present invention comprises a semiconductor light-emitting device, and the semiconductor light-emitting device comprises: a first conductive semiconductor layer; a second conductive semiconductor layer having a lateral surface, and overlapped with the first conductive semiconductor layer; a first conductive electrode electrically connected to the first conductive semiconductor layer; and a second conductive electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer has an inclined part inclined with respect to the lateral surface, and the second conductive electrode is formed so as to cover the inclined part.

Display device having semiconductor light-emitting device with inclined portion

Disclosed is a light emitting diode display device in which a time taken in a process of connecting a light emitting device to a pixel circuit is shortened. The light emitting diode display device includes a thin film transistor (TFT) array substrate including a concave portion and a light emitting device disposed in the concave portion. The light emitting device includes a first electrode and a second electrode. The light emitting device further includes a first portion, including the first and second electrodes, and a second portion opposite to the first portion, and a distance between the first portion to a floor surface of the concave portion is greater than a distance between the second portion to the floor surface of the concave portion.

Display device having light emitting diode disposed in the concave portion of the planarization layer

A display device including a substrate; a first electrode on the substrate; and a plurality of semiconductor light emitting devices disposed on the first electrode; and a second electrode. Further, at least one of the semiconductor light emitting devices includes a first conductive semiconductor layer; a second conductive semiconductor layer overlapping with the first conductive semiconductor layer; and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer. In addition, an upper surface of the second conductive layer includes a recess groove having a bottom portion and a lateral wall portion formed along an edge of the second conductive semiconductor layer, and the second electrode extends partially on the bottom portion of the groove and on the lateral wall portion.

Display device using semiconductor light emitting device and method for manufacturing the same

A semiconductor device including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer which are sequentially stacked; a first conductivity type upper electrode portion and a first conductivity type lower electrode portion disposed to correspond to each other with the first conductivity type semiconductor layer interposed therebetween; a second conductivity type upper electrode portion and a second conductivity type lower electrode portion disposed to correspond to each other with the first and second conductivity type semiconductor layers interposed therebetween; and a second conductivity type electrode connection portion electrically connecting the second conductivity type upper electrode portion and the second conductivity type lower electrode portion.

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Seoul, South Korea

Hwankuk Yuh