Lg Electronics Inc.

Hwanjoon Choi

Yonghan Lee

Kyoungtae Wi

Sungjin Park

Byungjoon Rhee

Kyuhyun Bang

Jinhyoun Joe

Discussed is a display device including a substrate including a plurality of electrode lines; and a plurality of semiconductor light emitting devices disposed on the substrate and electrically connected to the plurality of electrode lines; wherein each of the plurality of semiconductor light emitting devices includes: a first conductive semiconductor layer; a plurality of second conductive semiconductor layers formed on the first conductive semiconductor layer; and an active layer formed between the first and second conductive semiconductor layers, and wherein each of the plurality of semiconductor light emitting devices includes a plurality of active layers spaced apart from each other.

Display device using micro LED

This semiconductor light emitting device includes an emission layer, a passivation layer on the emission layer, and a first adhesive layer on the passivation layer. The passivation layer may include a plurality of grooves, and the first adhesive layer may be disposed in each of the plurality of grooves. Arranging the first adhesive layer in the plurality of grooves may enhance fixability. The display device includes a plurality of semiconductor light emitting devices. The semiconductor light emitting devices may include a horizontal semiconductor light emitting device, a flip chip semiconductor light emitting device, or a vertical semiconductor light emitting device.

Semiconductor light-emitting element and display device

A semiconductor light emitting element for a display device can include a semiconductor light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a light extraction structure disposed on top of the second conductivity type semiconductor layer of the semiconductor light emitting structure, in which the light extraction structure includes a plurality of organic protrusions protruding in a vertical direction of the second conductivity type semiconductor layer; and a surface roughness pattern formed on at least a portion of a top surface of the second conductivity type semiconductor layer, and at least one of the plurality of organic protrusions contains nanoparticles positioned at an end of the at least one of the plurality of organic protrusions and an organic component supporting the nanoparticles.

Display device using micro LED, and method for manufacturing same

Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.

Display device using micro LED, and manufacturing method therefor

The present invention relates to a display device, using semiconductor light-emitting diodes, comprising: a wiring board which comprises a row line for providing a row signal, a column line for providing a column signal, a VCC line connected to a VCC input terminal, and a VDD line connected to a VDD input terminal; and an interposer which is provided on the wiring board, has pixels, comprising semiconductor light-emitting diodes, along a plurality of rows and columns, and comprises IC chips for controlling the pixel light emission. The interposer comprises: a first terminal connected to the row line and for transmitting the row signal to the IC chips; a second terminal connected to the column line and for transmitting the column signal to the IC chips; a third terminal connected to the VCC line and connecting the VCC input terminal and the IC chips; and a fourth terminal connected to the VDD line and connecting the VDD input terminal and the IC chips.

Display device using semiconductor light-emitting diodes

Disclosed herein is a transfer substrate used for manufacturing a display device using a light emitting semiconductor device. The transfer substrate include a base substrate, and a divided unit phosphor structure arranged on the base substrate and transferred onto the light emitting semiconductor device.

Substrate for manufacturing display device, display device and manufacturing method thereof

Discussed is a display device having a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements includes a first electrode and a second electrode spaced apart each other, a first conductivity type semiconductor layer disposed with the first electrode, a second conductivity type semiconductor layer configured to overlap with the first conductivity type semiconductor layer, and disposed with the second electrode, a first passivation layer covering outer surfaces of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a second passivation layer covering the first passivation layer, wherein at least one portion of the second electrode is overlapped with at least one portion of the first electrode along the thickness direction of the semiconductor light emitting element.

Display device using semiconductor light emitting element

Discussed is a display apparatus including a wiring board having wiring electrodes; a conductive adhesive layer covering the wiring electrodes; a plurality of semiconductor light emitting devices coupled to the conductive adhesive layer and electrically connected to the wiring electrodes; and an insulating material disposed between the plurality of adhesive regions to fill between the plurality of semiconductor light emitting devices, wherein each electrode of the plurality of semiconductor light emitting devices includes a first conductive electrode, a first conductive semiconductor layer on the first conductive electrode, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a second conductive electrode on the second conductive semiconductor layer, and wherein the second conductive electrode is disposed on one surface of the second conductive semiconductor layer.

Display apparatus comprising light emitting devices coupled to a wiring board with conductive adhesive

The present invention relates to a display device and, particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements comprises: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer in which the first conductive electrode is disposed; a second conductive semiconductor layer which overlaps the first conductive semiconductor layer and in which the second conductive electrode is disposed; a first passivation layer formed to cover outer surfaces of the first conductive semiconductor layer and the second conductive semiconductor layer; and a second passivation layer formed to cover the first passivation layer and formed such that at least a portion thereof varies in thickness.

The present invention relates to a display apparatus using a semiconductor light emitting device and a manufacturing method therefor and, more specifically, to a display apparatus using a semiconductor light emitting device. The display apparatus according to the present invention comprises: a wiring board which comprises a wiring electrode; a conductive adhesive layer which covers the wiring electrode; and a plurality of semiconductor light emitting devices which are coupled to the conductive adhesive layer and are electrically connected to the wiring electrode, wherein the conductive adhesive layer is applied in a patterned form on each electrode of the semiconductor light emitting devices such that a plurality of adhesive regions are provided spaced apart from each other on the wiring board.

The present disclosure relates to a display device and, in particular, a display device using a semiconductor light-emitting device. The display device according to the present disclosure comprises: a substrate having a wiring electrode; a plurality of semiconductor light-emitting elements are electrically connected to the wiring electrode; a plurality of fluorescent substance layers for converting a wavelength of light; a wavelength conversion layer having a plurality of light-emitting elements formed from a plurality of fluorescent substance layers, and a color filter disposed so as to cover the wavelength conversion layer, where at least one of the plurality of fluorescent substance layers has a plurality of layers.

Display device using semiconductor light-emitting element

The present invention relates to a display apparatus and, particularly, to a display, apparatus using a semiconductor light emitting device. A display apparatus according to the present invention has a new type of partition wall structure capable of compensating an adhesive force between a wavelength conversion layer and a color filter in the display apparatus, improving structural reliability while further expanding a filling space of phosphor.

Display apparatus using semiconductor light emitting device and manufacturing method therefor

The present invention relates to a display device and, particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises: a substrate at which a wire electrode is formed; a plurality of semiconductor light emitting elements electrically connected to the wire electrode; a plurality of fluorescent material layers for converting a wavelength of light; a wavelength converting layer which has a plurality of partition wall portions formed between the plurality of fluorescent material layers and is disposed to cover the plurality of semiconductor light emitting elements; and a color filter which has a plurality of filtering portions for filtering blue, green, and red colors, and is disposed to cover the wavelength converting layer, wherein at least one of the plurality of filtering portions is configured to have a width different from those of the other filtering portions.

Display device using semiconductor light emitting element and method for manufacturing same

A display device including a plurality of vertical type semiconductor light-emitting diodes; a plurality of horizontal type semiconductor light-emitting diodes; a first wiring formed on a substrate and including a plurality of electrode lines, a first electrode line being connected with first conductive electrodes of the vertical type semiconductor light-emitting diodes and a second electrode line being connected with first conductive electrodes of the horizontal type semiconductor light-emitting diodes; a second wiring spaced apart from and crossing the first wiring and electrically connected with second conductive electrodes of the vertical type semiconductor light-emitting diodes; and a third wiring formed on the substrate, electrically connected with the second wiring, and connected with second conductive electrodes of the horizontal type semiconductor light-emitting diodes.

Display device using semiconductor light-emitting diode

A display device include a substrate including a wiring electrode; an adhesive layer disposed on the substrate; a plurality of semiconductor light emitting devices adhered to the adhesive layer, and electrically connected to the wiring electrode; and a phosphor layer disposed to cover the plurality of semiconductor light emitting devices. Further, the phosphor layer includes a plurality of phosphor portions for converting a wavelength of light, and a plurality of partition wall portions formed between the plurality of phosphor portions, and the plurality of partition wall portions are sequentially disposed between the phosphor portions along a first direction and a second direction crossing each other, respectively, and at least one of the sequentially disposed partition wall portions overlaps with at least one of the plurality of semiconductor light emitting devices.

Growing community of inventors

Seoul, South Korea

Hwanjoon Choi