Samsung Electronics Co., Ltd.

Hwangju Song

Sangwon Hwang

Jiseok Lee

Jaeeun Yoon

Namyong Kim

Sangmu Lee

A memory device includes; a memory cell array including memory cells, a row decoder selecting a word line in response to a received address, and control logic including a sensing capacitor having a size proportional to a size of a word line capacitor associated with the selected word line. The control logic measures line resistance of the selected word line by precharging the selected word line, performing a charge sharing operation between the selected word line and the sensing capacitor following the precharging of the selected word line, and measuring a voltage of the sensing capacitor following the performing of the charge sharing operation.

Memory device detecting defect by measuring line resistance of word line

A storage device for performing a reliability check by using error correction code (ECC) data is provided. The storage device includes a memory controller configured to detect the number of errors of second read data read out by a second read operation, based on ECC data of first read data read by a first read operation of a memory device. The memory controller includes a memory check circuit that includes a counter configured to count states of memory cells, a comparator configured to compare respective count numbers of the states with one another, and a register configured to store the number of errors based on a result of the comparison.

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Suwon-si, South Korea

Hwangju Song