Samsung Electronics Co., Ltd.

Hwan-wook Park

Young-chan Jang

Woo-seop Kim

Young-Uk Chang

A semiconductor memory device includes a plurality of chips, a data path that is physically shared by the plurality of chips, a data input/output pad, and a data output driver. The data output driver is configured to receive merged data that includes data merged from a set of chip data read from the plurality of chips, compare the merged data to first reference data in a test mode, compare the merged data to second reference data in a test mode, and based on the comparisons, apply an output voltage at a data input/output pad.

Semiconductor memory device having physically shared data path and test device for the same

A data transceiver system may include an error corrector. The error corrector may include a plurality of delay units, each delay unit being configured to delay a corresponding data signal among a plurality of data signals by a time in response to a corresponding delay code among a plurality of delay codes and outputting the delayed data signal, an error detector configured to receive the plurality of delay codes, determine whether an error has occurred, and output an error signal according to the determination in a data frame lock operation, and a delay controller configured to set initial values of the plurality of delay codes to a predetermined value, vary and output each of the plurality of delay codes in response to a lock signal, and reset initial values the plurality of delay codes in response to the error signal in the data frame lock operation.

Data transceiver system and associated methods

A method and system for testing a semiconductor memory device using low-speed test equipment. The method includes providing a high-frequency test pattern by grouping a command signal and an address signal into command signal groups and address signal groups each corresponding to L cycles of a clock signal output from automatic test equipment (ATE) where L is a natural number. A valid command signal and a valid address signal, which are not in an idle state, are extracted from each of a plurality of command signal groups and each of a plurality of address signal groups. The valid command signal and the valid address signal are compressed into signals having a length corresponding to 1/M (M is a natural number larger than 1) of the cycle of the clock signal where M is a natural number larger than 1. A position designating signal indicating the positions of the valid command signal and the valid address signal in each command signal group and each address signal group is generated. A high-frequency command signal and a high-frequency address signal from the compressed valid command signal and the compressed valid address signal using the position designating signal are generated.

Method and apparatus for generating high-frequency command and address signals for high-speed semiconductor memory device testing

A power-up/power-down detecting circuit may include a power detecting circuit, a selecting circuit, and a determining circuit. The power detecting circuit may generate a plurality of detection signals based on a plurality of sensing signals corresponding to currents flowing through a plurality of function blocks. The selecting circuit may generate a plurality of selection signals. The determining circuit may generate a power-up completion signal and a power-down completion signal. A semiconductor device having the power-up/power-down detecting circuit may determine in real time the power-up time and the power-down time.

Circuit of detecting power-up and power-down

A test system employing a test controller compressing data, a data compressing circuit and a test method are provided. The test system includes a tester, a device under test (DUT), and a test controller receiving a first clock signal and serial data bits output from the DUT, compressing the serial data bits by m bits (m&#x2267;4) in response to a second clock signal to generate a signature signal, and outputting the signature signal to the tester. The tester compares a computed signature signal to a 1-bit signature signal to determine whether the DUT is operating poorly or not.

Test system employing test controller compressing data, data compressing circuit and test method

Provided are a test pattern generating circuit which generates test patterns having various types and lengths and a semiconductor memory device which performs a test operation using the test pattern generating circuit. The test pattern generating circuit includes a plurality of register blocks which receive test signals input from an external tester through an input/output pad and load the test signals into the resister blocks in synchronization with a low-frequency clock signal; a register block control unit which controls the activation of the register blocks; and an output unit which is connected to the register blocks and outputs the signals loaded into the register blocks as test patterns in synchronization with a high-frequency clock signal.

Growing community of inventors

Seongnam-si, South Korea

Hwan-wook Park