Samsung Electronics Co., Ltd.

Hwan-Shik Park

Chung-sam Jun

Jang-Ik Park

Kyung-Woo Lee

Jin-sung Kim

Ji-Hye Kim

Chung-Sam Jun

Sang-jun Park

Sun-Yong Choi

Yeong-Cheol Lee

Kwan-Woo Ryu

Kye-Weon Kim

Joo-Byoung Yoon

Kong-Jung Sa

So-Yeon Yun

Hyun-Jong Kim

Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

Apparatus and method for manufacturing semiconductor devices through layer material dimension analysis

A light focusing unit and a spectrum measuring apparatus having the same are provided. The light focusing unit includes a light source section configured to emit light, a light guiding section configured to guide the light emitted from the light source section along multiple parallel light incidence paths, and a light focusing section configured to direct the light from the guiding section to be incident on a test position of a sample at different incidence angles.

Light focusing unit and spectrum measuring apparatus having the same

In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower electrode layer is formed on the first mold layer pattern. A second lower electrode layer including a plurality of first pores is formed on the first lower electrode layer and in the opening. Upper portions of the first lower electrode layer and the second lower electrode layer are removed to form a first lower electrode and a second lower electrode in the opening. A dielectric layer and an upper electrode are successively formed on the first lower electrode and the second lower electrode. Therefore, a capacitor having an enhanced capacitance may be obtained.

Methods of manufacturing a semiconductor device

An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.

Apparatus and method for measuring a thickness of a substrate

In a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate first, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.

Method and apparatus for measuring thickness of metal layer

Growing community of inventors

Seoul, South Korea

Hwan-Shik Park