Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Hyundai Motor Company

Kia Motors Corporation

Lg Innotekco., Ltd.

Lg Innotek

Cams Co., Ltd

Hwan Hee Jeong

Sang Youl Lee

June O Song

Kwang Ki Choi

Ji Hyung Moon

Hee Seok Choi

Tchang Hun Oh

Chung Song Kim

So Jung Kim

Young Kyu Jeong

Tae-Yeon Seong

Se Yeon Jung

Sang Hoon Lee

Chang Man Lim

Dae Sung Kang

Hyun Ju Kim

Yon Tae Moon

Jung Hyeok Bae

Eun Joo Kim

Koh Eun Lee

Yun Soo Song

Chan Keun Park

Young Ik Cho

Yong Won Jeong

Ga Yeon Kim

Yong Suk Shin

Hyoung Seok Do

Chong Wook Cho

A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

Light emitting apparatus

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.

Semiconductor light emitting device

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Light emitting device and light emitting device package

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Semiconductor light-emitting device and method for fabricating the same

An embodiment relates to a light emitting element package and display device. The light emitting element package according to the embodiment comprises: a substrate; a first light emitting element disposed on the substrate and emitting a red wavelength; a second light emitting element disposed in parallel with the first light emitting element in a first direction and emitting a blue or green wavelength; a third light emitting device disposed in parallel with the first and second light emitting elements in a second direction that is orthogonal to the first direction and emitting a green or blue wavelength; and a molding part covering the first to third light emitting elements, wherein a first upper electrode connected to the first light emitting element, a second upper electrode connected to the second light emitting element, a third upper electrode connected to the third light emitting element, and a fourth upper electrode commonly connected to the first to third light emitting elements are included on the substrate, the first to third light emitting elements are arranged to be misaligned in the first direction, and the centers of the first to third light emitting elements can be arranged within a curvature range having a curvature radius of 250 &#x3bc;m from the center of the substrate. The light emitting element package according to the embodiment can provide full colors, implement uniform color and uniform brightness, and increase a bonding force between the molding part and the substrate. In the embodiment, a configuration can be simplified and slimness can be implemented.

Light-emitting element package and display device having same

A light-emitting element disclosed according to an embodiment may comprise: a substrate comprising a body, a plurality of lead electrodes arranged over the body in a first axial direction, and a heat-radiating frame and a plurality of lead frames arranged below the body in a second axial direction; and a light-emitting chip arranged on a first lead electrode, which is arranged in the central area of the body among the plurality of lead electrodes, and electrically connected with the plurality of lead electrodes. The plurality of lead electrodes have a large length in the second axial direction, the heat-radiating frame is arranged in the central area below the body, and the heat-radiating frame and the plurality of lead frames have a large length in the first axial direction and may vertically overlap with the plurality of lead electrodes.

Light emitting device and lighting device having same

According to an embodiment, a light-emitting device is disclosed. The disclosed light-emitting device comprises: a substrate having a body and first and second lead electrodes on the body; a light-emitting chip arranged on the second lead electrode and electrically connected to the first and second lead electrodes; a phosphor film arranged on the light-emitting chip; a reflective member arranged on the outer peripheries of the light-emitting chip and the phosphor film, respectively; and an optical lens, which is arranged on the phosphor film and on the reflective member, and which has a lens portion that has an aspherical shape.

Light-emitting device and lighting device having same

A light emitting device including a substrate, a first conductive layer on the substrate, a second conductive layer on the first conductive layer, a metal layer on the second conductive layer, a light emitting structure on the metal layer and the second conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, and a passivation layer disposed on a side surface of the light emitting structure. Further, the metal layer directly contacts with the light emitting structure, the second conductive layer directly contacts with the light emitting structure, a portion of the passivation layer is disposed on a top surface of the light emitting structure, a width of the second conductive layer greater than a width of the metal layer, and a distance between a top surface of the substrate and a bottom surface of the metal layer at a center portion of the metal layer is different from a distance between the top surface of the substrate and the bottom surface of the metal layer at a side portion of the metal layer.

Structure of a reflective electrode and an OHMIC layer of a light emitting device

Disclosed are a light emitting diode and a lighting system having the same. The light emitting diode according to an embodiment may include a first electrode having a plurality of patterns formed on an upper surface thereof; a texture structure having a plurality of patterns corresponding to the plurality of patterns of the first electrode and configured to be in contact with at least one of the plurality of patterns of the first electrode; a first conductive semiconductor layer disposed on the texture structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; and a second electrode disposed on the second conductive semiconductor layer.

Light-emitting diode and lighting system

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.

Light emitting device

Growing community of inventors

Seoul, South Korea

Hwan Hee Jeong