Amotech Co., Ltd.

Korea Research Institute of Standards and Science

Hwack Joo Lee

Chang Hak Choi

Byung Kyu Kim

Sahn Nahm

Jun Hwan Jeong

Min Han Kim

Sang Jung Ahn

Dal Hyoun Kim

Jung In Yang

The movement-free bending method means the one of deformation methods for a one- or two-dimensional nanostructures using an ion beam capable of bending and deforming them and furthermore, changing a bending direction without requiring a motion such as a rotation of the nanostructures. The present invention affords a movement-free bending method for deforming the nanostructurehaving the one-dimensional or two-dimensional shape by irradiating the ion beam, wherein a bending direction of the nanostructureis controlled depending on energy of the ion beamor a thickness of the nanostructure

Movement-free bending method for one-dimensional or two-dimensional nanostructure using ion beam

The present invention discloses a dielectric ceramic composition having a formula represented by (1&minus;x)Nd(Ga Al )O -xCaTiO , wherein x refers a mole fraction of CaTiO to the composition and satisfies an expression of 0.5&lE;x&lE;0.8, and y refers a mole fraction of Al to Ga and satisfies an expression of 0&lE;y&lE;0.9. The present dielectric substance has a high dielectric constant and a high Q value and a resonant frequency temperature coefficient of near 0. Also, it can be sintered at a low temperature and thus replace the conventional dielectric materials used as a filter for parts of mobile communication or satellite communication appliances.

Dielectric ceramic compositions

The present invention discloses a method for preparing Ba(Zn Ta )O dielectric ceramic compositions. In accordance with the present invention, by adding a small amount of Al O , Ga O , ZrO , or TiO , which can generate metal ion having an atomic value of 3&plus; or 4&plus;, the problems occurring during the sintering of BZT due to the volatilization of Zn can be solved. Also, the BZT dielectrics obtained from the present method have a Q value of 200,000, which is higher than the pure BZT, a dielectric constant of 28.5 or more and a resonant frequency temperature coefficient of near 0.

Method for preparing dielectric ceramic compositions

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Daejeon, South Korea

Hwack Joo Lee