Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Corporation

Hwa Sun Lee

Tae Kyung Lee

Ran Hee Shin

Jin Suk Son

Sung Sun Kim

Je Hong Kyoung

Sung Woo Han

Moon Chul Lee

Jae Chang Lee

Won Jae Han

Seung Joo Shin

Tae Yoon Kim

Chang Hyun Lim

Tah Joon Park

Sang Uk Son

Yun Sung Kang

Jeong Suong Yang

Byung Hun Kim

Yoon Sok Park

Eun Tae Park

Pil Joong Kang

Hyun Min Hwang

Seung Wook Park

Jin Ho Lee

Seung Mo Lim

Jong Woon Kim

Sung Jun Lee

Jin Woo Cho

Sang Kee Yoon

Tae Hun Lee

Jae Hyun Jung

Kyo Yeol Lee

Dae Hun Jeong

Seong Hun Na

Young Chul Ko

Dae Ho Kim

Jong Beom Kim

Min Seog Choi

Sang Hyun Yi

Seung Wan Lee

Won Kyoung Choi

Moon Chui Lee

Sangweol Han

A vehicle passenger accident prevention system includes a vehicle operation status measurement unit that measures operation states of a vehicle and outputs corresponding signals, a driving unit to drive the vehicle, a braking unit to brake the vehicle, a FCA system that controls the operation of the driving unit and the braking unit, and a controller that detects the seated state of a passenger in the vehicle or a wearing state of a seat belt according to the output signal of the vehicle operation status measurement unit. In particular, the controller controls the operation of the FCA system according to a predetermined control mode in advance when a standing passenger in the vehicle is detected or an unbuckled seat belt is detected.

Vehicle passenger accident prevention system and control method for the same

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

Acoustic resonator and method of manufacturing the same

A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.

Bulk-acoustic wave resonator

A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant 'c' to an in-plane lattice constant 'a' (c/a) of less than 1.58.

A bulk-acoustic wave resonator includes: a substrate; a seed layer disposed on the substrate, and having a hexagonal crystal structure; a bottom electrode disposed on the seed layer; a piezoelectric layer at least partially disposed on the bottom electrode; and a top electrode disposed on the piezoelectric layer, wherein either one or both of the bottom electrode and the top electrode includes a scandium (Sc)-containing aluminum alloy layer.

An acoustic resonator filter is provided. The acoustic resonator filter includes a rear filter electrically connected between a front port and a rear port, through which a radio frequency (RF) signal passes, the rear filter including at least one film bulk acoustic resonator (FBAR); and a front filter electrically connected between the front port and the rear filter and including at least one solidly mounted resonator (SMR).

Acoustic resonator filter

A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

Film bulk acoustic resonator and method of manufacturing the same

A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer covering at least a portion of the first electrode, and a second electrode covering at least a portion of the piezoelectric layer. When an active region, in which the first electrode and the second electrode are disposed to overlap each other, is viewed from above, among four sides of a rectangle with which at least three vertices of a polygon formed by the active region are in contact, a longest side is defined as a side B and a side connected to side B is defined as a side A, and an aspect ratio (side B/side A) is 1.3 to 3.

Bulk-acoustic wave resonator and bulk-acoustic wave filter device

A bulk-acoustic wave resonator is provided. The bulk-acoustic wave resonator comprises a substrate comprising an external connection electrode; a connection layer connected to the external connection electrode and disposed on the substrate; a first electrode disposed to cover at least a portion of the connection layer; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The connection layer may be disposed to surround a cavity and may be connected to the first electrode and the second electrode.

A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.

A fine dust concentration sensor includes a bulk acoustic resonator and a cap including an upper portion with holes therein and a lateral portion connected to the upper portion to accommodate the bulk acoustic resonator. An upper surface of the upper portion of the cap is coated with a hydrophobic material.

Fine dust concentration sensor

An acoustic resonator includes: a central portion; an extension portion extended outwardly of the central portion; a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, in the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion, wherein the piezoelectric layer includes a piezoelectric portion disposed in the central portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline depending on a shape of the insertion layer.

A bulk acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the first electrode; and a second electrode disposed on the piezoelectric layer; wherein the first electrode includes an aluminum alloy layer containing scandium (Sc), and has a surface roughness of 2.4 nm or less, based on an arithmetic mean roughness.

A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).

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Suwon-si, South Korea

Hwa Sun Lee