Samsung Display Co., Ltd.

Hwa-Dong Jung

Joo-han Kim

Joo Seok Yeom

Hyoung Cheol Lee

Hyuk Soon Kwon

Jee-Hun Lim

Tae-Kyung Yim

Jae-Hak Lee

Jeong-Ju Park

Se-Myung Kwon

So-Young Koo

Wan-Soon Lim

Wan-Soon Im

Young-Goo Song

Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel

In a method of forming an active pattern, a gate metal layer is formed on a base substrate. The gate metal layer is patterned to form a gate line, and a gate pattern spaced apart from the gate line. A gate insulation layer is formed on the base substrate including the gate line and the gate pattern thereon, to form a first protruded boundary surface corresponding to an area including the gate pattern. An amorphous semiconductor layer is formed on the base substrate including the gate insulation layer thereon, to form a second protruded boundary surface corresponding to the first protruded boundary surface. The amorphous semiconductor layer is crystallized by illuminating a laser to the amorphous semiconductor layer on the second protruded boundary surface.

Method of forming an active pattern, display substrate formed by the same, and method of manufacturing the display substrate

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Seoul, South Korea

Hwa-Dong Jung