Saudi Basic Industries Corporation

King Abdullah University of Science and Technology

Sabic Global Technologies B.v.

Husam N Alshareef

Ihab N Odeh

Mohd Adnan Khan

Mahmoud N Almadhoun

Mohamed Eddaoudi

Osama Shekhah

Ji Hoon Park

Unnat S Bhansali

Khaled Nabil Salama

Amro M Elshurafa

Jiangtao Jia

Arijit Mallick

Jesus Alfonso Caraveo Frescas

Bilal Ahmed

Moussa M Saleh

Prince Xavier

Sharath Kandambeth

Ihab N Oden

Bhansali Unnat

Embodiments include an electrode material including a plurality of cores fused to a plurality of redox active linkers via Aza units to form a layered two-dimensional (2D) Aza-fused pi-conjugated covalent organic framework (COF). Embodiments also include a negative electrode material including the electrode material, as well as a supercapacitor device and an asymmetric supercapacitor device including the electrode material. Embodiments further include a method of making an electrode material including one or more of the following steps: combining a hexaketocyclohexane compound and an aromatic tetraamine compound in a solution; mixing the solution including the hexaketocyclohexane compound and the aromatic tetraamine compound; and heating the mixed solution to form a 2D Aza-fused pi-conjugated COF.

Conductive two-dimensional (2D) covalent organic frameworks (COFS) and method of making an electrode material

Embodiments of the present disclosure describe an electrode material comprising a metal ion cluster and an organic linker with a redox-active center associated with the metal ion cluster sufficient to form a metal-organic framework. Embodiments of the present disclosure further describe a method of forming an electrode material comprising contacting a metal ion cluster with an organic linker including a redox-active center sufficient to form a metal-organic framework. Embodiments of the present disclosure also describe a metal-organic framework composition comprising a metal ion cluster and an organic linker with a redox-active center associated with the metal ion cluster.

Compositions and methods of making metal-organic frameworks with redox-active centers

Disclosed is a ferroelectric material and methods for its use in capacitors that includes a polymer blend of at least two polymers, wherein the first polymer is a ferroelectric polymer and the second polymer has a low dielectric constant.

Ferroelectric capacitor with improved fatigue and breakdown properties

Ferroelectric components, such as the ferroelectric field effect transistors (FeFETs), ferroelectric capacitors and ferroelectric diodes described above may be operated as multi-level memory cells as described by the present invention. Storing multiple bits of information in each multi-level memory cell may be performed by a controller coupled to an array of the ferroelectric components configured as ferroelectric memory cells. The controller may execute the steps of receiving a bit pattern for writing to a multi-level memory cell comprising a ferroelectric layer; selecting a pulse duration for applying a write pulse to the memory cell based, at least in part, on the received bit pattern; and applying at least one write pulse to the memory cell having the selected pulse duration, in which the at least one write pulse creates a remnant polarization within the ferroelectric layer that is representative of the received bit pattern.

Non-volatile ferroelectric memory cells with multilevel operation

Embodiments of the present disclosure include nanowire field-effect transistors, systems for temperature history detection, methods for thermal history detection, a matrix of field effect transistors, and the like.

Thermal history devices, systems for thermal history detection, and methods for thermal history detection

Methods for producing ferroelectric device are described. A method includes positioning an organic polymeric ferroelectric layer between two conductive materials to form a stack. The stack can be subjected to a 2-step heat treating process. The first heat treating step transforms the organic polymeric ferroelectric precursor to a ferroelectric material having ferroelectric hysteresis properties, and the second heat treating step densities the ferroelectric material to obtain the ferroelectric device. The thin film ferroelectric device can include a thin film ferroelectric capacitor, a thin film ferroelectric transistor, or a thin film ferroelectric diode.

Methods for producing a thin film ferroelectric device using a two-step temperature process on an organic polymeric ferroelectric precursor material stacked between two conductive materials

Disclosed is a fractional order capacitor comprising a dielectric nanocomposite layer of thickness t, comprising a first side, and a second side opposite the first side, a first electrode layer coupled to the first side of the dielectric nanocomposite layer, a second electrode layer coupled to the second side of the dielectric nanocomposite layer, a complex impedance phase angle dependent on at least a material weight percentage of filler material in a dielectric nanocomposite layer.

Fractional order capacitor

A ferroelectric device comprising: a substrate; a first electrode disposed on the substrate; a ferroelectric layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer.

Ferroelectric devices, interconnects, and methods of manufacture thereof

Disclosed herein is a composite material comprising a relaxor ferroelectric material and a hydrazine-reduced graphene oxide, wherein the weight ratio of the composite material to the hydrazine-reduced graphene oxide is 9:1 to 200:1. The composite materials have high dielectric permittivity and low dielectric losses and can be used to manufacture various high dielectric permittivity components.

Growing community of inventors

Thuwal, Saudi Arabia

Husam N Alshareef