Micron Technology Incorporated

Other

Superconducting Core Technologies, Inc.

Husam N Al-Shareef

Scott Jeffrey DeBoer

Randhir P Thakur

Randhir P S Thakur

Dan Gealy

F Daniel Gealy

Dave Chapek

Daniel Gealy

Ronald Allen Weimer

Cem Basceri

Er-Xuan Ping

Scott Jeffery DeBoer

Vishnu Kumar Agarwal

Scott J Deboer

Duane B Dimos

David Galt

Carl H Mueller

Robert William Schwartz

Mark Victor Raymond

A method and apparatus for preventing NO from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate NO as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres NO and a temperature range of 600&#xb0; C. to 750&#xb0; C., which are the conditions that lead to the NO going super critical. By preventing the NO from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

Method for stabilizing high pressure oxidation of a semiconductor device

A method and apparatus for preventing NO from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus utilize a catalyst to catalytically disassociate NO as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere NO and a temperature range of 600&#xb0; to 750&#xb0; C., which are the conditions that lead to the NO going super critical. By preventing the NO from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

Apparatus for stabilizing high pressure oxidation of a semiconductor device

A method and apparatus for preventing NO from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate NO as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres NO and a temperature range of 600&#xb0; C. to 750&#xb0; C., which are the conditions that lead to the NO going super critical. By preventing the NO from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film. Embodiments include a method of operating an antifuse, comprising applying a voltage across electrodes of a capacitor having a tantalum oxynitride film and forming a hole in the tantalum oxynitride film.

Antifuse having tantalum oxynitride film and method for making same

A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.

Method of fabricating a semiconductor device with a wet oxidation with steam process

Method of processing a transistor gate dielectric film with stem

A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.

Capacitor having tantalum oxynitride film and method for making same

Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process

A method and apparatus for preventing NO from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate NO as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres NO and a temperature range of 600&#xb0; to 750&#xb0; C., which are the conditions that lead to the NO going super critical. By preventing the NO from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

Method of fabricating a capacitive element for a semiconductor device

The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric region positioned therebetween. The high k capacitor dielectric region includes a layer of metal oxide having multiple different metals bonded with oxygen. The layer has varying stoichiometry across its thickness. The layer includes an inner region, a middle region, and an outer region. The middle region has a different stoichiometry than both the inner and outer regions.

Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen

An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming the conductive film using a vapor deposition process with a reaction gas comprising fluorine. In the case of a gate stack, the transition metal boride layer can help reduce or eliminate the diffusion of fluorine atoms from the conductive film into a gate dielectric layer. Similarly, in the case of digit line stacks as well as gate stacks, the transition metal boride layer can reduce the diffusion of silicon from the polysilicon layer into the conductive film to help maintain a low resistance for the conductive film.

Fabrication of semiconductor devices with transition metal boride films as diffusion barriers

Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta O formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta O capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta O in an oxygen containing environment at a temperature of at least about 175&deg; C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode comprises a conductive metal oxide. A more preferred second capacitor electrode comprises a conductive silicon comprising layer, over a conductive titanium comprising layer, over a conductive metal oxide layer. A preferred first capacitor electrode comprises a conductively doped Si&mdash;Ge alloy. Preferably, a Si N layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed.

Methods of forming capacitors

A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.

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Al-Ain, United Arab Emirates

Husam N Al-Shareef