Shenzhen China Star Optoelectronics Technology Co., Ltd.

Hunglung Hou

Chiachiang Lin

Chengming He

Chiayu Lee

A pixel structure is provided to increase a response speed of liquid crystal and includes a first thin-film transistor, a second thin-film transistor, an upper substrate, a lower substrate opposite to the upper substrate, pixel electrodes arranged on the lower substrate, a common electrode arranged on the upper substrate, and assisting electrodes arranged on the lower substrate. The assisting electrodes are arranged to be each sandwiched between every two pixel electrodes. The first thin-film transistor includes a first drain terminal, a first source terminal, and a first gate terminal. The second thin-film transistor includes a second drain terminal, a second source terminal, and a second gate terminal. The pixel electrodes are electrically connected to the second drain terminal. The assisting electrodes are electrically connected to the first drain terminal.

Pixel structure that increases response speed of liquid crystal

The present invention provides a pixel structure that increases response speed of liquid crystal, which includes a first thin-film transistor, a second thin-film transistor, an upper substrate, a lower substrate opposite to the upper substrate, pixel electrodes arranged on the lower substrate, a common electrode arranged on the upper substrate, and assisting electrodes arranged on the lower substrate. The assisting electrodes are arranged to be each sandwiched between every two pixel electrodes. The first thin-film transistor includes a first drain terminal, a first source terminal, and a first gate terminal. The second thin-film transistor includes a second drain terminal, a second source terminal, and a second gate terminal. The pixel electrodes are electrically connected to the second drain terminal. The assisting electrodes are electrically connected to the first drain terminal.

A thin film transistor includes a gate terminal, an insulation layer formed on the gate terminal, a first semiconductor silicon layer formed on the insulation layer, a source terminal formed on the first semiconductor silicon layer, and a drain terminal. The drain terminal is partially located on the insulation layer and the first semiconductor silicon layer. The drain terminal and the gate terminal overlap each other via the insulation layer to form a first overlap region and also overlap each other via the first semiconductor silicon layer and the insulation layer to form a second overlap region. The first and second overlap regions respectively generate first and second parasitic capacitances. The thin film transistor includes a compensation structure, whereby when the drain terminal is shifted with respect to the gate terminal, the compensation structure maintaining area of the first overlap region and area of the second overlap region unchanged.

Thin film transistor with parasitic capacitance compensation structure and liquid crystal display using same

The present invention discloses a display pixel structure, a liquid crystal panel, a liquid crystal display (LCD) device and a driving method. Said display pixel structure comprises multiple parallel pixel areas; each said pixel area comprises two single rows of first sib-pixel area and second sub-pixel area which are mutually parallel; said second sub-pixel area comprises multiple pixel elements; every three adjacent pixel elements form a group; and the three pixel elements of each group are respectively corresponding to three primary colors. The present invention has the advantages that the corresponding phase retardation coating is not exceeded within the range of wider light; the XTALK problem under the condition of large-angle light is avoided; the viewed color is not changed because the light emitted by each pixel of the second sub-pixel area is not blocked; and higher aperture opening ratio is obtained.

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Shenzhen, China

Hunglung Hou