Lite-on Technology Corporation

Silitek Electronic (guangzhou) Co., Ltd.

Hung-Yuan Su

Ru-Shi Liu

Chien-Yuan Wang

Liang-Sheng Chi

Chia-Cheng Kang

Chia-Hao Wu

Jia-Min Shieh

Chih-Chiang Kao

Yi-Shan Lin

Chen-Hsiu Lin

Yu-Sheng Tang

Chung-Chan Wu

Shu-Fen Hu

Chen-Lun Hsing Chen

Cheng-Wen Tsai

Hsing Chen Chen-Lun

Jen Chun Weng

Tseng-Guang Tsai

Shu-Yun Su

Tzeng-Guang Tsai

Chien-Lin Chang Chien

Daw-Heng Wong

A manufacturing method of an LED device includes the following steps. First, a substrate and at least one LED disposed on the substrate are provided. Next, a porous material layer having a plurality of pores is formed on a surface of the LED. Finally, a plurality of nanocrystals are formed in the pores to construct a phosphor layer on the surface of the LED.

Light emitting diode device

The present invention fluorescence material has a particle diameter of the crystal area defined as d, and the scope of dis: 150 nm&#x2267;d&#x2267;10 nm. The coat of the outside of the fluorescence material has one sheet of coating medium at least. Of course, there is at least a geometrical etching layer on the particle of the fluorescence material. The above-described structures will promote the extraction efficiency of light.

Fluorescence material

Light emitting diode device and manufacturing method thereof

A transparent layer and a phosphor layer are covered on the LED chip for increasing light emission efficiency and evenness of the LED. Based on angle-dependent emission strength of the LED chip, the phosphor layer is designed with different thickness or contains different phosphor powder concentration in different section. The lights emitted with different strength from different angle of the LED chip are transformed into uniform compound lights after passing through the phosphor layer that has different thickness or phosphor powder concentration. Micro structures capable of destroying the full reflection occurred on the incident lights are further configured on both the inner and outer surfaces of the phosphor layer to increase the light emission efficiency.

Photoelectric semiconductor device capable of generating uniform compound lights

A light emitting apparatus includes a blue light emitting diode (LED), a first and second phosphor layers. The second phosphor layer is between the blue LED and the first phosphor layer. When a blue beam of a shorter wavelength excites the phosphor layers, the excitation efficiency of the first phosphor layer is greater than that of the second phosphor layer. When a blue beam of a longer wavelength excites the phosphor layers, the excitation efficiency of the first phosphor layer is less than that of the second phosphor layer. Moreover, the wavelength of the peak intensity of the light beam from the first phosphor layer is shorter than that of the second phosphor layer. And, the dividing value between the shorter wavelength and the longer wavelength is within the range from a first wavelength to a second wavelength.

Light emitting apparatus with open loop control

A light-emitting device with open-loop control including a LED capable of emitting a blue light and a mix-light adjusting portion is provided. The mix-light adjusting portion includes a first and a second fluorescent material both capable of being excited by blue light. When the first and the second fluorescent material are excited by a short-wavelength blue light, the excitation intensity of the first fluorescent material is higher than that of the second fluorescent material. When the first and the second fluorescent material are excited by a long-wavelength blue light, the excitation intensity of the first fluorescent material is lower than that of the second fluorescent material. The peak wavelength of the emission of the first fluorescent material is smaller than that of the emission of the second fluorescent material. The dividing wavelength between the short-wavelength blue light and the long-wavelength blue light ranges from a first to a second wavelength.

Light-emitting device with open-loop control and manufacturing method thereof

A semiconductor light-emitting device includes: a hollow body including a bottom wall and a surrounding wall cooperating with the bottom wall to define an encapsulant-receiving recess, the bottom wall being formed with a through-hole, the surrounding wall having a diffuse surface that surrounds the encapsulant-receiving recess; a heat-dissipating body provided on a bottom side of the bottom wall and covering the through-hole in the bottom wall; a light-emitting chip disposed in the through-hole in the bottom wall; a transparent encapsulant filling the encapsulant-receiving recess and the through-hole; and a wavelength-converting layer covering the transparent encapsulant.

Semiconductor light-emitting device

A white light emitting diode component capable of emitting white light includes an LED chip capable of emitting luminescent light, a first phosphor for absorbing first luminescent light of the luminescent light and emitting first emission, and a second phosphor for absorbing second luminescent light of the luminescent light and emitting second emission. A blend of the luminescent light (except for the first and the second luminescent light) and the first and the second emissions forms the white light. The first phosphor has a chemical formula of (CaEuM)Se, where x is not equal to zero, y is between zero and one, and M is composed of at least one element selected from a group consisting of Be, Mg, Sr, Ba, and Zn.

White light emitting diode component having two phosphors and related phosphor and formation method

A reflection-type optoelectronic semiconductor device has an LED chip disposed on a first conducting wire portion, a second conducting wire portion connected to the LED chip via a connection wire, a packaging body for sealing the LED chip and part of the first conducting wire portion and the second conducting wire portion, a reflecting face disposed in an opposite direction of a light emission face of the LED chip and surrounding the packaging body, and an optical spectrum conversion layer coated onto the packaging body. A primary light emitted by the LED chip is reflected to the optical spectrum conversion layer by the reflecting face to undergo light excitation for producing a secondary light. The primary light and the secondary light are combined to generate a mixed light. A lens can be placed in the travel direction of the mixed light to change the distribution of the mixed light.

Reflection-type optoelectronic semiconductor device

A method for manufacturing a white light source provides an LED light source and a semiconductor-type phosphor with (Zn, Cd)S being the host with foreign ions added thereto as luminescence centers. The LED light source emits light ranging from 495 nm about (blue-green light) to about 340 nm (ultra-violet).

Method for manufacturing white light source

A light-emitting diode (LED) component includes a light-emitting chip for emitting luminescent light, and a phosphor for absorbing first luminescent light of the luminescent light and emitting first emission, the first luminescent light having a first wavelength different from that of the first emission, the phosphor having a chemical formula of (CaEuM)Se where x is not equal to zero, y is between zero and one, and M is composed of at least one element selected from a group consisting of Be, Mg, Sr, Ba, and Zn.

Light emitting diode component capable of emitting white lights

A method for manufacturing a white light source includes steps of providing an ultra-violet light as a radiation source, preparing three kinds of first phosphors each receiving the ultra-violet light and emitting the light of red, green and blue, respectively, and preparing at least one additional second phosphor to modify a spectral property of the light emitted by the three first phosphors in order to improve the brightness and color rendering property of the white light source. Moreover, at least one phosphor with the fluorescent property is used as the above second phosphor powder to obtain a color-changeable light source.

An optical semiconductor component has multiple conducting wire holders, multiple chip carriers secured, multiple semiconductor chips, a first curved surface made of the conducting wire holders, the semiconductor chips being placed at its focus, multiple connecting components made of the conducting wire holders, and a second curved surface surrounded by a package body, the semiconductor chips being placed at its focus. The chip carriers are independent components and have a multi-layer structure. The middle layer is an insulator used to separate the chip from the conducting wire holder electrically or thermally. Hence, when connected with a metal radiator, the chip carrier does not cause electric leakage. Further, the connecting components of the present invention are mutually independent, which can provide multiple photodiodes with different driving voltages to connect with each other in series or parallel.

Optical semiconductor component to prevent electric leakage and provide different driving voltages

A white light-emitting device has a semiconductor light-emitting chip, configured to emit light and at least one (BaM)AlOphosphor to absorb the light emitted from the semiconductor light-emitting chip to emit a white light, where M is consisted of at least one of Eu, Bi, Mn, Ce, Tb, Gd, La, Mg and Sr, 1&#x3e;x&#x3e;0.

Growing community of inventors

Taipei, Taiwan

Hung-Yuan Su