Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung Yu Lai

Yuan-Ching Peng

Chen-Yu Chen

Yu-Bey Wu

Wen-Yun Wang

Yu-Shan Lu

Yu-Fan Peng

Tang Ming Lee

A semiconductor structure includes a fin extending from a substrate and oriented lengthwise in a first direction, where the fin includes a stack of semiconductor layers, an isolation feature disposed over the substrate and oriented lengthwise in a second direction perpendicular to the first direction, where the isolation feature is disposed adjacent to the fin, and a metal gate structure having a top portion disposed over the stack of semiconductor layers and a bottom portion interleaved with the stack of semiconductor layers. Furthermore, a sidewall of the bottom portion of the metal gate structure is defined by a sidewall of the isolation feature, and the top portion of the metal gate structure laterally extends over a top surface of the isolation feature.

Multi-gate field-effect transistors and methods of forming the same

Growing community of inventors

Hsinchu, Taiwan

Hung Yu Lai