United Microelectronics Corp.

Hung-Yu Fan Chiang

Chuan-Fu Wang

Cheng-Hsiao Lai

Guan-Lin Chen

Yu-Huan Yeh

Chi-Hsiu Hsu

A forming method of a ReRAM array includes steps as follows: Firstly, a first pulse is applied to a first ReRAM unit in the ReRAM array. Afterwards, a second pulse is applied to the first ReRAM unit, wherein the electrical property of the first pulse is opposite to that of the second pulse. Then, a verification pulse is applied to the first ReRAM unit to verify whether the first resistance value of the first ReRAM unit passes a preset threshold. When the first resistance value passes the preset threshold value, a third pulse is applied to the first ReRAM unit, wherein the first pulse and the third pulse have the same electrical property, and the first pulse has a voltage value substantially the same to that of the third pulse.

Growing community of inventors

Hsinchu, Taiwan

Hung-Yu Fan Chiang